CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Emitter Voltage V 25 V CES Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5.0 V EBO Continous Collector Current I 1.0 A C Peak Collector Current I 2.0 A CM Continuous Base Current I 100 mA B Peak Base Current I 200 mA BM Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 104 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=25V 100 nA CBO CB I V =25V, T=150C 10 A CBO CB A I V=5.0V 10 A EBO EB BV I=10A 25 V CBO C BV I=10mA 20 V CEO C BV I=10A 5.0 V EBO E V I =1.0A, I=100mA 0.5 V CE(SAT) C B V V =10V, I=5.0mA 0.6 V BE(ON) CE C V V =1.0V, I=1.0A 1.0 V BE(ON) CE C h V =10V, I=5.0mA 50 FE CE C h V =1.0V, I =500mA (CBCX68, CBCX69) 85 375 FE CE C h V =1.0V, I =500mA (CBCX68-16, CBCX69-16) 100 250 FE CE C h V =1.0V, I =500mA (CBCX68-25, CBCX69-25) 160 400 FE CE C h V =1.0V, I=1.0A 60 FE CE C f V =5.0V, I =10mA, f=20MHz 65 MHz T CE C R11 (23-February 2012)CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS SOT-89 CASE - MECHANICAL OUTLINE (BOTTOM VIEW) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R11 (23-February 2012) www.centralsemi.com