X-On Electronics has gained recognition as a prominent supplier of CMPT6517 TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CMPT6517 TR Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CMPT6517 TR Central Semiconductor

CMPT6517 TR electronic component of Central Semiconductor
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Part No.CMPT6517 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT Complementary HV 350Vcbo 350Vceo
Datasheet: CMPT6517 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3256 ea
Line Total: USD 0.33 
Availability - 35047
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
35047
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.2233
100 : USD 0.1463
1000 : USD 0.1353
3000 : USD 0.1034
9000 : USD 0.1023
99000 : USD 0.1001

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMPT6517 TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPT6517 TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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CMPT6517 NPN CMPT6520 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMPT6517 and SILICON TRANSISTORS CMPT6520 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage driver and amplifier applications. MARKING CODES: CMPT6517: C1Z CMPT6520: C2Z SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 350 V CBO Collector-Emitter Voltage V 350 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 500 mA C Continuous Base Current I 250 mA B Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=250V 50 nA CBO CB I V =5.0V (CMPT6517) 50 nA EBO EB I V =4.0V (CMPT6520) 50 nA EBO EB BV I=100A 350 V CBO C BV I=1.0mA 350 V CEO C BV I =10A (CMPT6517) 6.0 V EBO E BV I =10A (CMPT6520) 5.0 V EBO E V I =10mA, I=1.0mA 0.30 V CE(SAT) C B V I =20mA, I=2.0mA 0.35 V CE(SAT) C B V I =30mA, I=3.0mA 0.50 V CE(SAT) C B V I =50mA, I=5.0mA 1.0 V CE(SAT) C B V I =10mA, I=1.0mA 0.75 V BE(SAT) C B V I =20mA, I=2.0mA 0.85 V BE(SAT) C B V I =30mA, I=3.0mA 0.90 V BE(SAT) C B V I =10V, I =100mA 2.0 V BE(ON) C C h V =10V, I=1.0mA 20 FE CE C h V =10V, I =10mA FE CE C 30 R5 (1-February 2010)CMPT6517 NPN CMPT6520 PNP SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I=30mA 30 200 FE CE C h V =10V, I=50mA 20 200 FE CE C h V =10V, I=100mA 15 FE CE C f V =20V, I =10mA, f=20MHz 40 200 MHz T CE C C V =20V, I =0, f=1.0MHz 6.0 pF cb CE C C V =0.5V, I =0, f=1.0MHz (CMPT6517) 80 pF eb EB E C V =0.5V, I =0, f=1.0MHz (CMPT6520) 100 pF eb EB E SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT6517: C1Z CMPT6520: C2Z R5 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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