TIP31
TIP31A
TIP31B
www.centralsemi.com
TIP31C
DESCRIPTION:
SILICON
The CENTRAL SEMICONDUCTOR TIP31 series devices
NPN POWER TRANSISTORS
are silicon NPN epitaxial-base power transistors designed
for power amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (T =25C unless otherwise noted)
C
SYMBOL TIP31 TIP31A TIP31B TIP31C UNITS
Collector-Base Voltage V 40 60 80 100 V
CBO
Collector-Emitter Voltage V 40 60 80 100 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 3.0 A
C
Peak Collector Current I 5.0 A
CM
Continuous Base Current I 1.0 A
B
Power Dissipation P 40 W
D
Power Dissipation (T=25C) P 2.0 W
A D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 62.5 C/W
JA
Thermal Resistance 3.13 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I V =30V (TIP31, TIP31A) 0.3 mA
CEO CE
I V =60V (TIP31B, TIP31C) 0.3 mA
CEO CE
I V =Rated V 0.2 mA
CES CE CEO
I V=5.0V 1.0 mA
EBO EB
BV I =30mA (TIP31) 40 V
CEO C
BV I =30mA (TIP31A) 60 V
CEO C
BV I =30mA (TIP31B) 80 V
CEO C
BV I =30mA (TIP31C) 100 V
CEO C
V I =3.0A, I=375mA 1.2 V
CE(SAT) C B
V V =4.0V, I=3.0A 1.8 V
BE(ON) CE C
h V =4.0V, I=1.0A 25
FE CE C
h V =4.0V, I=3.0A 10 50
FE CE C
h V =10V, I =0.5A, f=1.0kHz 20
fe CE C
f V =10V, I =0.5A, f=1.0MHz 3.0 MHz
T CE C
t I =1.0A, I =I =0.1A, R=30 0.3 s
on C B1 B2 L
t I =1.0A, I =I =0.1A, R=30 1.0 s
off C B1 B2 L
R0 (12-June 2014) TIP31
TIP31A
TIP31B
TIP31C
SILICON
NPN POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
R0 (12-June 2014)
www.centralsemi.com