TIP31 TIP31A TIP31B www.centralsemi.com TIP31C DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR TIP31 series devices NPN POWER TRANSISTORS are silicon NPN epitaxial-base power transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL TIP31 TIP31A TIP31B TIP31C UNITS Collector-Base Voltage V 40 60 80 100 V CBO Collector-Emitter Voltage V 40 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 3.0 A C Peak Collector Current I 5.0 A CM Continuous Base Current I 1.0 A B Power Dissipation P 40 W D Power Dissipation (T=25C) P 2.0 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 62.5 C/W JA Thermal Resistance 3.13 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =30V (TIP31, TIP31A) 0.3 mA CEO CE I V =60V (TIP31B, TIP31C) 0.3 mA CEO CE I V =Rated V 0.2 mA CES CE CEO I V=5.0V 1.0 mA EBO EB BV I =30mA (TIP31) 40 V CEO C BV I =30mA (TIP31A) 60 V CEO C BV I =30mA (TIP31B) 80 V CEO C BV I =30mA (TIP31C) 100 V CEO C V I =3.0A, I=375mA 1.2 V CE(SAT) C B V V =4.0V, I=3.0A 1.8 V BE(ON) CE C h V =4.0V, I=1.0A 25 FE CE C h V =4.0V, I=3.0A 10 50 FE CE C h V =10V, I =0.5A, f=1.0kHz 20 fe CE C f V =10V, I =0.5A, f=1.0MHz 3.0 MHz T CE C t I =1.0A, I =I =0.1A, R=30 0.3 s on C B1 B2 L t I =1.0A, I =I =0.1A, R=30 1.0 s off C B1 B2 L R0 (12-June 2014) TIP31 TIP31A TIP31B TIP31C SILICON NPN POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R0 (12-June 2014) www.centralsemi.com