X-On Electronics has gained recognition as a prominent supplier of TIP42C Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TIP42C Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TIP42C Central Semiconductor

TIP42C electronic component of Central Semiconductor
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Part No.TIP42C
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP 100Vcbo 100Vceo 5.0Vebo 65W
Datasheet: TIP42C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
715: USD 0.1696 ea
Line Total: USD 121.26 
Availability - 1239
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 715  Multiples: 1
Pack Size: 1
Availability Price Quantity
1239
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 715
Multiples : 1
715 : USD 0.1696

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
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TIP42 TIP42A TIP42B www.centralsemi.com TIP42C DESCRIPTION: PNP SILICON The CENTRAL SEMICONDUCTOR TIP42 SERIES POWER TRANSISTOR types are PNP Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (T =25C) SYMBOL TIP42 TIP42A TIP42B TIP42C UNITS C Collector-Base Voltage V 40 60 80 100 V CBO Collector-Emitter Voltage V 40 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 6.0 A C Peak Collector Current I 10 A CM Continuous Base Current I 2.0 A B Power Dissipation P 65 W D Power Dissipation (T=25C) P 2.0 W A D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =30V (TIP42, TIP42A) 0.7 mA CEO CE I V =60V (TIP42B, TIP42C) 0.7 mA CEO CE I V =Rated V 0.4 mA CES CE CEO I V=5.0V 1.0 mA EBO EB BV I =30mA (TIP42) 40 V CEO C BV I =30mA (TIP42A) 60 V CEO C BV I =30mA (TIP42B) 80 V CEO C BV I =30mA (TIP42C) 100 V CEO C V I =6.0A, I=0.6A 1.5 V CE(SAT) C B V V =4.0V, I=6.0A 2.0 V BE(ON) CE C h V =4.0V, I=0.3A 30 FE CE C h V =4.0V, I=3.0A 15 75 FE CE C h V =10V, I =0.5A, f=1.0kHz 20 fe CE C f V =10V, I =0.5A, f=1.0MHz 3.0 MHz T CE C t I =6.0A, I = I =0.6A, R=5.0 0.4 s on C B1 B2 L t I =6.0A, I = I =0.6A, R=5.0 0.7 s off C B1 B2 L R2 (22-July 2014) TIP42 TIP42A TIP42B TIP42C PNP SILICON POWER TRANSISTOR TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R2 (22-July 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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