X-On Electronics has gained recognition as a prominent supplier of CY14B101KA-ZS45XI NVRAM across the USA, India, Europe, Australia, and various other global locations. CY14B101KA-ZS45XI NVRAM are a product manufactured by Infineon. We provide cost-effective solutions for NVRAM, ensuring timely deliveries around the world.

CY14B101KA-ZS45XI Infineon

CY14B101KA-ZS45XI electronic component of Infineon
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Part No.CY14B101KA-ZS45XI
Manufacturer: Infineon
Category: NVRAM
Description: NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
Datasheet: CY14B101KA-ZS45XI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
135: USD 21.2625 ea
Line Total: USD 2870.44 
Availability - 0
MOQ: 135  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 11 Dec to Tue. 17 Dec
MOQ : 135
Multiples : 1
135 : USD 21.2625

0
Ship by Mon. 09 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 26.675
10 : USD 24.574
25 : USD 23.683
100 : USD 23.672
270 : USD 23.661
1080 : USD 23.65

   
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We are delighted to provide the CY14B101KA-ZS45XI from our NVRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY14B101KA-ZS45XI and other electronic components in the NVRAM category and beyond.

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CY14B101KA CY14B101MA 1-Mbit (128K 8/64K 16) nvSRAM with Real Time Clock 1-Mbit (128K 8/64K 16) nvSRAM with Real Time Clock Industry standard configurations Features Single 3 V +20%, 10% operation 1-Mbit nonvolatile static random access memory (nvSRAM) Industrial temperature 25 ns and 45 ns access times Packages Internally organized as 128K 8 (CY14B101KA) or 64K 16 (CY14B101MA) 44-/54-pin thin small outline package (TSOP) Type II Hands off automatic STORE on power-down with only a small 48-pin shrink small outline package (SSOP) capacitor Pb-free and restriction of hazardous substances (RoHS) STORE to QuantumTrap nonvolatile elements is initiated by compliant software, hardware, or AutoStore on power-down RECALL to SRAM initiated on power-up or by software Functional Description High reliability The Cypress CY14B101KA/CY14B101MA combines a 1-Mbit Infinite Read, Write, and RECALL cycles nvSRAM with a full featured real time clock in a monolithic 1 million STORE cycles to QuantumTrap integrated circuit. The embedded nonvolatile elements 20 year data retention incorporate QuantumTrap technology producing the worlds Real time clock (RTC) most reliable nonvolatile memory. The SRAM is read and written an infinite number of times, while independent nonvolatile data Full featured real time clock resides in the nonvolatile elements. Watchdog timer Clock alarm with programmable interrupts The real time clock function provides an accurate clock with leap Capacitor or battery backup for RTC year tracking and a programmable, high accuracy oscillator. The Backup current of 0.35 A (Typ) alarm function is programmable for periodic minutes, hours, days, or months alarms. There is also a programmable watchdog timer for process control. For a complete list of related documentation, click here. 1, 2, 3 Logic Block Diagram V CA V Quatrum CC P Trap 1024 X 1024 V POWER RTCbat A R 5 CONTROL STORE V O A RTCcap 6 W A RECALL 7 A STORE/RECALL 8 D HSB A CONTROL 9 E STATIC RAM A 12 C ARRAY A 13 O 1024 X 1024 SOFTWARE A D 14 A - A 14 2 A E DETECT 15 A R 16 DQ 0 DQ 1 DQ 2 X out DQ 3 RTC X in DQ I 4 INT N DQ 5 P DQ U 6 T DQ 7 B COLUMN I/O U MUX A - A DQ 16 0 8 F DQ F 9 E OE DQ 10 R COLUMN DEC WE DQ S 11 DQ 12 DQ 13 CE DQ 14 BLE A A A A A A A 0 1 2 3 4 10 11 DQ 15 BHE Notes 1. Address A A for 8 configuration and Address A A for 16 configuration. 0 16 0 15 2. Data DQ DQ for 8 configuration and Data DQ DQ for 16 configuration. 0 7 0 15 3. BHE and BLE are applicable for 16 configuration only. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-42880 Rev. *P Revised December 6, 2017CY14B101KA CY14B101MA Contents Pinouts ..............................................................................3 Data Retention and Endurance ..................................... 19 Pin Definitions ..................................................................4 Capacitance ....................................................................19 Device Operation ..............................................................5 Thermal Resistance ........................................................ 19 SRAM Read ................................................................5 AC Test Loads ................................................................ 20 SRAM Write .................................................................5 AC Test Conditions ........................................................ 20 AutoStore Operation ....................................................5 RTC Characteristics ....................................................... 20 Hardware STORE (HSB) Operation ............................5 AC Switching Characteristics ....................................... 21 Hardware RECALL (Power-Up) ..................................6 SRAM Read Cycle .................................................... 21 Software STORE .........................................................6 SRAM Write Cycle ..................................................... 21 Software RECALL .......................................................6 Switching Waveforms .................................................... 22 Preventing AutoStore ..................................................8 AutoStore/Power-Up RECALL ....................................... 25 Data Protection ............................................................8 Switching Waveforms .................................................... 25 Real Time Clock Operation ..............................................8 Software Controlled STORE/RECALL Cycle ................ 26 nvTIME Operation .......................................................8 Switching Waveforms .................................................... 26 Clock Operations .........................................................8 Hardware STORE Cycle ................................................. 27 Reading the Clock .......................................................8 Switching Waveforms .................................................... 27 Setting the Clock .........................................................8 Truth Table for SRAM Operations ................................. 28 Backup Power .............................................................8 Truth Table for SRAM Operations ................................. 28 Stopping and Starting the Oscillator ............................9 HSB must remain HIGH for SRAM operations........... 28 Calibrating the Clock ...................................................9 Ordering Information ...................................................... 29 Alarm ...........................................................................9 Package Diagrams .......................................................... 30 Watchdog Timer ........................................................10 Acronyms ........................................................................33 Power Monitor ...........................................................10 Document Conventions ................................................. 33 Interrupts ...................................................................10 Units of Measure ....................................................... 33 Flags Register ...........................................................11 Document History Page ................................................. 34 RTC External Components .......................................12 Sales, Solutions, and Legal Information ...................... 37 PCB Design Considerations for RTC ............................13 Worldwide Sales and Design Support ....................... 37 Layout requirements ..................................................13 Products ....................................................................37 Maximum Ratings ...........................................................18 PSoC Solutions ...................................................... 37 Operating Range .............................................................18 Cypress Developer Community ................................. 37 DC Electrical Characteristics ........................................18 Technical Support ..................................................... 37 Document Number: 001-42880 Rev. *P Page 2 of 37

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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