X-On Electronics has gained recognition as a prominent supplier of CY14B104NA-ZS45XIT NVRAM across the USA, India, Europe, Australia, and various other global locations. CY14B104NA-ZS45XIT NVRAM are a product manufactured by Infineon. We provide cost-effective solutions for NVRAM, ensuring timely deliveries around the world.

CY14B104NA-ZS45XIT Infineon

CY14B104NA-ZS45XIT electronic component of Infineon
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Part No.CY14B104NA-ZS45XIT
Manufacturer: Infineon
Category: NVRAM
Description: NVRAM 4Mb 3V 45ns 256K x 16 nvSRAM
Datasheet: CY14B104NA-ZS45XIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 30.393 ea
Line Total: USD 30393 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 10 Dec to Thu. 12 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 30.393

   
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We are delighted to provide the CY14B104NA-ZS45XIT from our NVRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY14B104NA-ZS45XIT and other electronic components in the NVRAM category and beyond.

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CY14B104LA CY14B104NA 4-Mbit (512K 8/256K 16) nvSRAM 4-Mbit (512K 8/256K 16) nvSRAM Packages Features 44-/54-pin thin small outline package (TSOP) Type II 20 ns, 25 ns, and 45 ns access times 48-ball fine-pitch ball grid array (FBGA) Internally organized as 512K 8 (CY14B104LA) or 256K 16 Pb-free and restriction of hazardous substances (RoHS) (CY14B104NA) compliant Hands off automatic STORE on power-down with only a small Functional Description capacitor The Cypress CY14B104LA/CY14B104NA is a fast static RAM STORE to QuantumTrap non-volatile elements initiated by (SRAM), with a non-volatile element in each memory cell. The software, device pin, or AutoStore on power-down memory is organized as 512K bytes of 8 bits each or 256K words RECALL to SRAM initiated by software or power-up of 16-bits each. The embedded non-volatile elements incor- porate QuantumTrap technology, producing the worlds most Infinite read, write, and recall cycles reliable non-volatile memory. The SRAM provides infinite read 1 million STORE cycles to QuantumTrap and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the 20 year data retention SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is Single 3 V +20, 10 operation restored to the SRAM (the RECALL operation) from the Industrial temperature non-volatile memory. Both the STORE and RECALL operations are also available under software control. For a complete list of related documentation, click here. 1, 2, 3 Logic Block Diagram V V CC CAP Quatrum Trap 2048 X 2048 A POWER 0 R CONTROL A STORE 1 O A 2 W RECALL A 3 STORE/RECALL A D 4 HSB CONTROL E STATIC RAM A 5 C ARRAY A 6 O 2048 X 2048 A 7 SOFTWARE D A A - A 8 14 2 DETECT E A 17 R A 18 DQ 0 DQ 1 DQ 2 DQ 3 I DQ 4 N DQ P 5 U DQ 6 T DQ B 7 COLUMN I/O U DQ 8 F DQ F 9 E OE DQ 10 COLUMN DEC R WE DQ 11 S DQ 12 DQ 13 CE DQ 14 BLE A A A A A A A A 9 10 11 12 13 14 15 16 DQ 15 BHE Notes 1. Address A A for 8 configuration and Address A A for 16 configuration. 0 18 0 17 2. Data DQ DQ for 8 configuration and Data DQ DQ for 16 configuration. 0 7 0 15 3. BHE and BLE are applicable for 16 configuration only. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-49918 Rev. *O Revised May 12, 2017CY14B104LA CY14B104NA Contents Pinouts ..............................................................................3 AutoStore/Power-Up RECALL ....................................... 16 Pin Definitions ..................................................................5 Switching Waveforms Device Operation ..............................................................6 AutoStore/Power-up RECALL .................................... 16 SRAM Read ................................................................6 Software Controlled STORE/RECALL Cycle ................ 17 SRAM Write .................................................................6 Switching Waveforms AutoStore Operation ....................................................6 Software Controlled STORE/RECALL Cycle ............. 17 Hardware STORE Operation .......................................6 Hardware STORE Cycle ................................................. 18 Hardware RECALL (Power-Up) ..................................7 Switching Waveforms Hardware STORE Cycle ........ 18 Software STORE .........................................................7 Truth Table For SRAM Operations ................................ 19 Software RECALL .......................................................7 Ordering Information ...................................................... 20 Preventing AutoStore ..................................................8 Ordering Code Definitions ......................................... 21 Data Protection ............................................................8 Package Diagrams .......................................................... 22 Maximum Ratings .............................................................9 Acronyms ........................................................................25 Operating Range ...............................................................9 Document Conventions ................................................. 25 DC Electrical Characteristics ..........................................9 Units of Measure ....................................................... 25 Data Retention and Endurance .....................................10 Document History Page ................................................. 26 Capacitance ....................................................................10 Sales, Solutions, and Legal Information ...................... 28 Thermal Resistance ........................................................10 Worldwide Sales and Design Support ....................... 28 AC Test Loads ................................................................11 Products ....................................................................28 AC Test Conditions ........................................................11 PSoC Solutions ...................................................... 28 AC Switching Characteristics .......................................12 Cypress Developer Community ................................. 28 Switching Waveforms ....................................................13 Technical Support ..................................................... 28 Document Number: 001-49918 Rev. *O Page 2 of 28

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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