X-On Electronics has gained recognition as a prominent supplier of CY14B108L-BA25XI NVRAM across the USA, India, Europe, Australia, and various other global locations. CY14B108L-BA25XI NVRAM are a product manufactured by Infineon. We provide cost-effective solutions for NVRAM, ensuring timely deliveries around the world.

CY14B108L-BA25XI Infineon

CY14B108L-BA25XI electronic component of Infineon
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Part No.CY14B108L-BA25XI
Manufacturer: Infineon
Category: NVRAM
Description: NVRAM NVSRAM Parallel 8Mbit 3V 48-Pin FBGA
Datasheet: CY14B108L-BA25XI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 55.2322 ea
Line Total: USD 55.23 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 12 Dec to Wed. 18 Dec
MOQ : 1495
Multiples : 1
1495 : USD 72.0555

0
Ship by Thu. 12 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 55.2322

   
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We are delighted to provide the CY14B108L-BA25XI from our NVRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY14B108L-BA25XI and other electronic components in the NVRAM category and beyond.

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CY14B108L CY14B108N 8-Mbit (1024 K 8/512 K 16) nvSRAM 8-Mbit (1024 K 8/512 K 16) nvSRAM Packages Features 44-/54-pin thin small outline package (TSOP) Type II 20 ns, 25 ns, and 45 ns access times 48-ball fine-pitch ball grid array (FBGA) Internally organized as 1024 K 8 (CY14B108L) or 512 K 16 Pb-free and restriction of hazardous substances (RoHS) (CY14B108N) compliant Hands off automatic STORE on power-down with only a small Functional Description capacitor The Cypress CY14B108L/CY14B108N is a fast static RAM STORE to QuantumTrap nonvolatile elements initiated by (SRAM), with a nonvolatile element in each memory cell. The software, device pin, or AutoStore on power-down memory is organized as 1024 Kbytes of 8 bits each or 512 K RECALL to SRAM initiated by software or power-up words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the worlds Infinite Read, Write, and RECALL cycles most reliable nonvolatile memory. The SRAM provides infinite 1 million STORE cycles to QuantumTrap read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers 20 year data retention from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On Single 3 V +20, 10 operation power-up, data is restored to the SRAM (the RECALL operation) Industrial temperature from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. For a complete list of related documentation, click here. [1, 2, 3] Logic Block Diagram V V CC CAP Quatrum Trap 2048 X 2048 X 2 A POWER 0 R A CONTROL O STORE 1 A W 2 RECALL A 3 STORE/RECALL A D 4 HSB CONTROL E STATIC RAM A 5 C ARRAY A 6 O 2048 X 2048 X 2 A 7 SOFTWARE D A A - A 8 14 2 DETECT E A 17 R A 18 A 19 DQ 0 DQ 1 DQ 2 DQ 3 I DQ 4 N DQ 5 P U DQ 6 T DQ 7 B COLUMN I/O U DQ 8 F DQ F 9 E OE DQ 10 COLUMN DEC R WE DQ 11 S DQ 12 DQ 13 CE DQ 14 BLE A A A A A A A A 9 10 11 12 13 14 15 16 DQ 15 BHE Errata: AutoStore Disable feature does not work in the device. For more information, see Errata on page 24. Details include errata trigger conditions, scope of impact, available workarounds, and silicon revision applicability. Notes 1. Address A A for 8 configuration and Address A A for 16 configuration. 0 19 0 18 2. Data DQ DQ for 8 configuration and Data DQ DQ for 16 configuration. 0 7 0 15 3. BHE and BLE are applicable for 16 configuration only. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-45523 Rev. *O Revised April 8, 2015CY14B108L CY14B108N Contents Pinouts ..............................................................................3 Software Controlled STORE/RECALL Cycle ................ 16 Pin Definitions ..................................................................4 Switching Waveforms .................................................... 16 Device Operation ..............................................................5 Hardware STORE Cycle ................................................. 17 SRAM Read ................................................................5 Switching Waveforms .................................................... 17 SRAM Write .................................................................5 Truth Table For SRAM Operations ................................ 18 AutoStore Operation ....................................................5 Ordering Information ...................................................... 19 Hardware STORE Operation .......................................5 Ordering Code Definitions ......................................... 19 Hardware RECALL (Power-Up) ..................................6 Package Diagrams .......................................................... 20 Software STORE .........................................................6 Acronyms ........................................................................23 Software RECALL .......................................................6 Document Conventions ................................................. 23 Preventing AutoStore ..................................................8 Units of Measure ....................................................... 23 Data Protection ............................................................8 Errata ...............................................................................24 Maximum Ratings .............................................................9 Part Numbers Affected .............................................. 24 Operating Range ...............................................................9 8Mb (1024 K 8, 512 K 16) nvSRAM DC Electrical Characteristics ..........................................9 Qualification Status ........................................................... 24 Data Retention and Endurance .....................................10 8Mb (1024 K 8, 512 K 16) nvSRAM Capacitance ....................................................................10 Errata Summary ............................................................... 24 Thermal Resistance ........................................................10 Document History Page ................................................. 25 AC Test Loads ................................................................11 Sales, Solutions, and Legal Information ...................... 27 AC Test Conditions ........................................................11 Worldwide Sales and Design Support ....................... 27 AC Switching Characteristics .......................................12 Products ....................................................................27 Switching Waveforms ....................................................12 PSoC Solutions ...................................................... 27 AutoStore/Power-Up RECALL .......................................15 Cypress Developer Community ................................. 27 Switching Waveforms ....................................................15 Technical Support ..................................................... 27 Document Number: 001-45523 Rev. *O Page 2 of 27

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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