Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048K 8/1024K 16/512K 32) nvSRAM 16-Mbit (2048K 8/1024K 16/512K 32) nvSRAM 60-ball fine-pitch ball grid array (FBGA) package Features 165-ball fine-pitch ball grid array (FBGA) package 16-Mbit nonvolatile static random access memory (nvSRAM) Restriction of hazardous substances (RoHS) compliant 25-ns, 30-ns, 35-ns, and 45-ns access times Internally organized as 2048K 8 (CY14X116L), Offered speeds 1024K 16 (CY14X116N), 512K 32 (CY14X116S) 44-pin TSOP II: 25 ns, 35 ns and 45 ns Hands-off automatic STORE on power-down with only a 48-pin TSOP I: 30 ns, 35 ns and 45 ns small capacitor 54-pin TSOP II: 25 ns, 35 ns and 45 ns STORE to QuantumTrap nonvolatile elements is initiated by 60-ball FBGA: 25 ns and 35 ns software, device pin, or AutoStore on power-down 165-ball FBGA: 25 ns, 35 ns, and 45 ns RECALL to SRAM initiated by software or power-up Functional Description High reliability Infinite read, write, and RECALL cycles The Cypress CY14X116L/CY14X116N/CY14X116S is a fast 1 million STORE cycles to QuantumTrap SRAM, with a nonvolatile element in each memory cell. The Data retention: 20 years memory is organized as 2048K bytes of 8 bits each or 1024K Sleep mode operation words of 16 bits each or 512K words of 32 bits each. The Low power consumption embedded nonvolatile elements incorporate QuantumTrap Active current of 75 mA at 45 ns technology, producing the worlds most reliable nonvolatile Standby mode current of 650 A memory. The SRAM can be read and written an infinite number Sleep mode current of 10 A of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM. Data Operating voltages: transfers from the SRAM to the nonvolatile elements (the CY14B116X: V = 2.7 V to 3.6 V CC STORE operation) takes place automatically at power-down. On CY14E116X: V = 4.5 V to 5.5 V CC power-up, data is restored to the SRAM (the RECALL operation) Industrial temperature: 40 C to +85 C from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. Packages 44-pin thin small-outline package (TSOP II) For a complete list of related documentation, click here. 48-pin thin small-outline package (TSOP I) 54-pin thin small-outline package (TSOP II) Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-67793 Rev. *P Revised September 19, 2019