Technische Information / Technical Information IGBT-Module FP100R06KE3 IGBT-modules EconoPIM3 Modul mit schnellem Trench/Feldstopp IGBT und Emitter Controlled3 Diode EconoPIM3 module with fast trench/fiedstop IGBT and Emitter Controlled3 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 175C I 100 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175 P 335 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 1,70 V C GE vj Gate-Schwellenspannung I = 1,60 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,00 C Gate charge Interner Gatewiderstand T = 25C R 2,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,20 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,19 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 300 V T = 25C 0,10 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 24 T = 150C 0,10 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 300 V T = 25C 0,06 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,065 s R = 24 T = 150C 0,07 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 300 V T = 25C 0,60 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,65 s R = 24 T = 150C 0,70 s Goff vj Fallzeit, induktive Last I = 100 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 24 T = 150C 0,12 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 300 V, L = 30 nH T = 25C 4,85 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1300 A/s (Tvj = 150C) Tvj = 125C Eon 5,70 mJ R = 24 T = 150C 6,00 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 300 V, L = 30 nH T = 25C 3,70 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2300 V/s (Tvj = 150C)Tvj = 125C Eoff 4,40 mJ R = 24 T = 150C 4,60 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 8 s, T = 25C 700 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 500 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,45 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,14 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module FP100R06KE3 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 600 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 100 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 200 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 1100 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 990 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 100 A, V = 0 V T = 25C 1,55 1,95 V F GE vj Forward voltage I = 100 A, V = 0 V T = 125C V 1,50 V F GE vj F IF = 100 A, VGE = 0 V Tvj = 150C 1,45 V Rckstromspitze I = 100 A, - di /dt = 1300 A/s (T =150C) T = 25C 50,0 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 60,0 A R vj RM VGE = -15 V Tvj = 150C 65,0 A Sperrverzgerungsladung I = 100 A, - di /dt = 1300 A/s (T =150C) T = 25C 3,00 C F F vj vj Recovered charge V = 300 V T = 125C Q 6,30 C R vj r VGE = -15 V Tvj = 150C 7,50 C Abschaltenergie pro Puls I = 100 A, - di /dt = 1300 A/s (T =150C) T = 25C 0,50 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 1,05 mJ R vj rec VGE = -15 V Tvj = 150C 1,30 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,80 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,25 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip TC = 80C IFRMSM 100 A Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 100 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 740 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 580 A Grenzlastintegral tp = 10 ms, Tvj = 25C 2750 As It It - value t = 10 ms, T = 150C 1700 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 100 A V 1,10 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,50 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,155 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 2