Technische Information / Technical Information IGBT-Module FS150R12KT4 B9 IGBT-modules EconoPACK3 Modul mit Trench/Feldstop IGBT4 und verdoppelter Emitter Controlled 4 Dioden Bestckung EconoPACK3 module with trench/fieldstop IGBT4 and doubled mounting Emitter Controlled 4 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 150 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 750 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 150 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 150 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 5,30 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,25 C Gate charge Interner Gatewiderstand T = 25C R 5,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 9,35 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,35 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 150 A, V = 600 V T = 25C 0,14 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,1 T = 150C 0,16 s Gon vj Anstiegszeit, induktive Last I = 150 A, V = 600 V T = 25C 0,025 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,033 s R = 1,1 T = 150C 0,036 s Gon vj Abschaltverzgerungszeit, induktive Last I = 150 A, V = 600 V T = 25C 0,35 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 1,1 T = 150C 0,44 s Goff vj Fallzeit, induktive Last I = 150 A, V = 600 V T = 25C 0,05 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,075 s R = 1,1 T = 150C 0,085 s Goff vj Einschaltverlustenergie pro Puls I = 150 A, V = 600 V, L = 40 nH T = 25C 8,10 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5000 A/s (Tvj = 150C) Tvj = 125C Eon 14,5 mJ R = 1,1 T = 150C 16,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 150 A, V = 600 V, L = 40 nH T = 25C 8,30 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4400 V/s (Tvj = 150C)Tvj = 125C Eoff 13,0 mJ R = 1,1 T = 150C 14,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 600 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,20 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,11 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.2 1Technische Information / Technical Information IGBT-Module FS150R12KT4 B9 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 150 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 600 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 12500 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 9800 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 150 A, V = 0 V T = 25C 1,40 1,85 V F GE vj Forward voltage I = 150 A, V = 0 V T = 125C V 1,30 V F GE vj F IF = 150 A, VGE = 0 V Tvj = 150C 1,25 V Rckstromspitze I = 150 A, - di /dt = 5000 A/s (T =150C) T = 25C 270 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 300 A R vj RM VGE = -15 V Tvj = 150C 310 A Sperrverzgerungsladung I = 150 A, - di /dt = 5000 A/s (T =150C) T = 25C 18,5 C F F vj vj Recovered charge V = 600 V T = 125C Q 31,0 C R vj r VGE = -15 V Tvj = 150C 37,0 C Abschaltenergie pro Puls I = 150 A, - di /dt = 5000 A/s (T =150C) T = 25C 6,90 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 13,0 mJ R vj rec VGE = -15 V Tvj = 150C 14,5 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,19 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,105 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.2 2