X-On Electronics has gained recognition as a prominent supplier of DPAD1 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. DPAD1 Small Signal Switching Diodes are a product manufactured by InterFET. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

DPAD1 InterFET

DPAD1 electronic component of InterFET
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See Product Specifications
Part No.DPAD1
Manufacturer: InterFET
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes Pico Amp Diode 45V Low Leakage Low Capacitance
Datasheet: DPAD1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.283 ea
Line Total: USD 19.28 
Availability - 226
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
226
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 19.283
10 : USD 17.93
25 : USD 17.193
50 : USD 16.918
100 : USD 15.576
250 : USD 14.806
500 : USD 14.08
1000 : USD 13.442
2500 : USD 12.947

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DPAD1 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DPAD1 and other electronic components in the Small Signal Switching Diodes category and beyond.

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Product Technical OrOrdderer Folder Support NowNow InterFET DPAD1-2 DPAD1, DPAD2 Dual PicoAmp Diode TO-72 Bottom View Features InterFET N0001H Geometry Cathode 3 Low Leakage: 0.5pA Typical Low Capacitance: 0.8pF Typical Anode 4 Anode 2 RoHS Compliant Custom Package types Available 1 Cathode Applications High Impedance Protection Circuits Low Power Battery Circuitry High Impedance Diode Switching Description The -45V InterFET DPAD1 and DPAD2 are targeted for low power and high impedance applications. Leakages are typically 0.5pA at room temperatures. The DPAD series houses two parts per package. The TO-72 package is hermetically sealed and suitable for military applications. Product Summary Parameters DPAD1 Min DPAD2 Min Unit BVR Breakdown Reverse Voltage -45 -45 V IR Reverse Current -1 (Max) -2 (Max) pA V Forward Voltage Drop 1.5 (Max) 1.5 (Max) V F Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging DPAD1 DPAD2 Through-Hole TO-72 Bulk Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35302.R00Product Technical OrOrdderer Folder Support NowNow InterFET DPAD1-2 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation mW D P Power Derating mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -55 to 125 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) DPAD1 DPAD2 Parameters Conditions Min Typ Max Min Typ Max Unit Breakdown BVR IR = -1A -45 -45 V Reverse Voltage I Reverse Current V = -20V -1 -2 pA R R Forward Voltage VF IF = 5mA 0.8 1.5 0.8 1.5 V Drop CR Capacitance VR = -5V, f = 1MHz 0.8 0.8 pF Differential C C R1 R2 VR1 = VR2 = -5V, f = 1MHz 0.2 0.2 pF Capacitance DPAD1-2 2 of 3 InterFET Corporation Document Number: IF35302.R00 www.InterFET.com December, 2018

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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