DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode V = 200 V DSS Low Q and R g g High dv/dt I = 25 A D25 Nanosecond Switching R = 0.13 Ideal for Class C, D, & E Applications DS(on) Symbol Test Conditions Maximum Ratings P = 590 W DC T = 25C to 150C J V 200 V DSS T = 25C to 150C R = 1 M J GS V 200 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 25 A D25 T = 25C, pulse width limited by T I c JM 150 A DM T = 25C c I 25 A AR T = 25C c E 20 mJ AR DRAIN I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 GATE j G dv/dt I = 0 S >200 V/ns P 590 W DC SG1 SG2 SD1 SD2 T = 25C c P 284 W DHS Derate 1.9W/C above 25C Features T = 25C P c 3.0 W DAMB Isolated Substrate high isolation voltage (>2500V) R 0.25 C/W thJC excellent thermal transfer R 0.53 C/W thJHS Increased temperature and power cycling capability Symbol Test Conditions Characteristic Values IXYS advanced low Q process g T = 25C unless otherwise specified J min. typ. max. Low gate charge and capacitances easier to drive V = 0 V, I = 3 ma GS D V 200 V DSS faster switching Low R V = V , I = 250A DS(on) DS GS D V 2.5 3.0 5.5 V GS(th) Very low insertion inductance (<2nH) V = 20 V , V = 0 GS DC DS I 100 nA GSS No beryllium oxide (BeO) or other hazardous materials V = 0.8 V T = 25C DS DSS J I 50 DSS A V = 0 T = 125C GS J Advantages 1 mA Optimized for RF and high speed V = 15 V, I = 0.5I GS D D25 R .13 DS(on) switching at frequencies to 100MHz Pulse test, t 300S, duty cycle d 2% Easy to mountno insulators needed V = 15 V, I = 0.5I , pulse test DS D D25 High power density g 13 16 18 S fs T -55 +175 C J T 175 C JM T -55 +175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 2 g DE275-201N25A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 2500 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 265 pF oss f = 1 MHz C 42 pF rss Back Metal to any Pin C 21 pF stray T 5 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 5 ns on I = 0.5 I D DM T R = 0.2 (External) 8 ns d(off) G T 8 ns off Q 81 nC g V = 10 V, V = 0.5 V GS DS DSS Q 14 nC gs I = 0.5 I D D25 Q 42 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 25 A S Repetitive pulse width limited by T JM I 150 A SM I = I , V = 0 V, F S GS V 2.0 V SD Pulse test, t 300 s, duty cycle 2% T 300 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at