DE275X2-501N16A RF Power MOSFET Common Source Push-Pull Pair N-Channel Enhancement Mode V = 500 V DSS Low Q and R g g High dv/dt I = 16 A D25 Nanosecond Switching R = 0.38 The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a DS(on) common source configuration. The device is optimized for push-pull or paral- P = 1180 W lel operation in RF generators and amplifiers at frequencies to >65 MHz. DC Unless noted, specifications are for each device Symbol Test Conditions Maximum Ratings T = 25C to 150C J V 500 V DSS T = 25C to 150C R = 1 M V J GS 500 V DGR Continuous 20 V V GS Transient V 30 V GSM DRAIN 2 T = 25C DRAIN 1 c 16 A I D25 T = 25C, pulse width limited by T c JM 186 A I DM T = 25C c I 16 A GATE 1 GATE 2 AR T = 25C c 20 mJ E AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G SG1 SD1 SD2 SG2 dv/dt I = 0 S >200 V/ns Features (1) P 1180 W DC Isolated Substrate (1) high isolation voltage (>2500V) T = 25C, Derate 6.0W/C above 25C c 750 W P DHS excellent thermal transfer (1) T = 25C c 5.0 W P DAMB Increased temperature and power cycling capability (1) R 0.13 C/W thJC IXYS advanced low Q process g (1) R 0.17 C/W thJHS Low gate charge and capacitances easier to drive Symbol Test Conditions Characteristic Values faster switching T = 25C unless otherwise specified J Low R DS(on) Very low insertion inductance (<2nH) min. typ. max. No beryllium oxide (BeO) or other V = 0 V, I = 3 ma GS D V 500 V DSS hazardous materials V = V , I = 4 ma DS GS D V 2.5 5.5 V GS(th) Advantages V = 20 V , V = 0 High Performance Push-Pull RF GS DC DS I 100 nA GSS Package V = 0.8 V T = 25C I DS DSS J 50 A DSS Optimized for RF and high speed V = 0 T = 125C GS J 1 mA switching at frequencies to >65MHz Easy to mountno insulators needed V = 15 V, I = 0.5I GS D D25 R 0.38 DS(on) High power density Pulse test, t 300S, duty cycle d 2% V = 15 V, I = 0.5I , pulse test DS D D25 g 2 11 S fs Note: All specifications are per each transistor, unless otherwise noted. T -55 +175 C J (1) Thermal specifications are for the T 175 C JM package, not per transistor -55 +175 C T stg 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 4 g DE275X2-501N16A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 1800 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 150 pF oss f = 1 MHz C 45 pF rss Back Metal to any Pin 21 pF C stray T 3 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 2 ns on I = 0.5 I D DM R = 0.2 (External) 4 ns T G d(off) T 5 ns off 50 nC Q g(on) V = 10 V, V = 0.5 V GS DS DSS Q 20 nC gs I = 0.5 I D D25 Q 30 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS 16 A I S Repetitive pulse width limited by T JM I 186 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, Q F S 0.8 RM C V = 100V R 6.5 A I RM (1) These parameters apply to the package, not individual MOSFET devices. For detailed device mounting and installation instructions, see the DE- Series MOSFET Mounting Instructions technical note on IXYS RFs web site at www.ixysrf.com/Technical Support/App notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045