DE375-102N15A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 1000 V High dv/dt DSS Nanosecond Switching I = 15 A D25 50MHz Maximum Frequency R 1.0 DS(on) Symbol Test Conditions Maximum Ratings T = 25C to 150C P = 940 W V J 1000 V DC DSS T = 25C to 150C R = 1 M J GS V 1000 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 15 A D25 T = 25C, pulse width limited by T c JM I 90 A DM T = 25C c I 15 A AR T = 25C c E 1 J AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 940 W DRAIN DC T = 25C GATE c P 425 W DHS Derate 3.7W/C above 25C T = 25C c P 4.5 W DAMB SG1 SG2 SD1 SD2 Symbol Test Conditions Characteristic Values Features T = 25C unless otherwise specified J min. typ. max. Isolated Substrate V = 0 V, I = 3 ma GS D V 1000 V DSS -High isolation voltage (>2500V) -Excellent thermal transfer V = V , I = 1 ma DS GS D V 4.0 5.4 6.0 V GS(th) -Increased temperature and power V = 20 V , V = 0 GS DC DS I 100 nA GSS cycling capability V = 0.8 V T = 25C DS DSS J I 50 IXYS advanced low Q process DSS A g V = 0 T = 125C GS J 1 mA Low gate charge and capacitances -Easier to drive V = 15 V, I = 0.5I R GS D D25 1.00 DS(on) -Faster switching Pulse test, t 300S, duty cycle d 2% Low R DS(on) R 0.13 C/W thJC Very low insertion inductance (<2nH) R 0.3 C/W thJHS No beryllium oxide (BeO) or other haz- ardous materials V = 15 V, I = 0.5I , pulse test DS D D25 g 11.3 13.0 S fs Advantages T -55 +150 C J Optimized for RF and high speed T 150 C switching at frequencies to 50MHz JM Easy to mountno insulators needed T -55 +150 C stg High power density 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 3 g DE375-102N15A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 0.2 G C 3000 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 93 pF oss f = 1 MHz C 9 pF rss Back Metal to any Pin C 33 pF stray T 5 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 3 ns on I = 0.5 I D DM R = 0.2 (External) G T 5 ns d(off) T 8 ns off Q 57 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 24 nC gs I = 0.5 I D D25 Q 22 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 15 A S Repetitive pulse width limited by T JM I 72 A SM I = I , V = 0 V, F S GS V 1.4 V SD Pulse test, t 300 s, duty cycle 2% T 250 ns rr I = I , -di/dt = 100A/s, Q F S 0.66 RM C V = 100V R I 7.6 A RM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at