X-On Electronics has gained recognition as a prominent supplier of DE150-501N04A RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. DE150-501N04A RF MOSFET Transistors are a product manufactured by IXYS. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

DE150-501N04A IXYS

DE150-501N04A electronic component of IXYS
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Part No.DE150-501N04A
Manufacturer: IXYS
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors
Datasheet: DE150-501N04A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 116.8547 ea
Line Total: USD 116.85 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 116.8547
5 : USD 83.753
10 : USD 73.3525
50 : USD 67.1839
100 : USD 60.4586

   
Manufacturer
Product Category
Transistor Polarity
Id - Continuous Drain Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Drain Source Voltage Vds
Operating Frequency Max
Rf Transistor Case
No. Of Pins
Svhc
Capacitance Ciss Typ
On Resistance Rdson
Operating Temperature Range
Rise Time
Threshold Voltage Vgs
Transistor Type
Voltage Vds Typ
Voltage Vgs Rds On Measurement
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We are delighted to provide the DE150-501N04A from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DE150-501N04A and other electronic components in the RF MOSFET Transistors category and beyond.

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DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 500 V DSS High dv/dt Nanosecond Switching I = 4.5 A D25 R 1.5 DS(on) Symbol Test Conditions Maximum Ratings P = 200W T = 25C to 150C J DC V 500 V DSS T = 25C to 150C R = 1 M V J GS 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 4.5 A D25 T = 25C, pulse width limited by T c JM I 27 A DM T = 25C c I 4.5 A AR T = 25C c E - mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 3.5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns DRAIN P 200 W DC GATE T = 25C c P 80 W DHS Derate 4.4W/C above 25C T = 25C c P 3.5 W DAMB R 0.74 C/W thJC SG1 SG2 SD1 SD2 R 1.50 C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate T = 25C unless otherwise specified J high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 3 ma GS D V 500 V DSS cycling capability V = V , I = 250 a DS GS D V 2.5 3.4 4 V IXYS advanced low Q process GS(th) g Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8 V T = 25C DS DSS J I 25 faster switching DSS A V = 0 T = 125C GS J 250 A Low R DS(on) Very low insertion inductance (<2nH) V = 15 V, I = 0.5I R GS D D25 1.2 1.5 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 60 V, I = 0.5I , pulse test DS D D25 g 1.9 S fs Advantages T -55 +175 C J Optimized for RF and high speed switching at frequencies to >100MHz T 175 C JM Easy to mountno insulators needed High power density T -55 +175 C stg 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 2 g DE150-501N04A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 5 G C 570 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 75 pF oss f = 1 MHz C 3 pF rss Back Metal to any Pin C 16 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM T R = 0.2 (External) 4 ns G d(off) T 4 ns off Q 14 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 3.5 nC gs I = 0.5 I , Ig = 3 ma D D25 Q 5.5 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 4.5 A S Repetitive pulse width limited by T JM I 27 A SM I = I , V = 0 V, F S GS V 1.4 V SD Pulse test, t 300 s, duty cycle 2% T 900 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits
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