X-On Electronics has gained recognition as a prominent supplier of DE475-102N21A RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. DE475-102N21A RF MOSFET Transistors are a product manufactured by IXYS. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

DE475-102N21A IXYS

DE475-102N21A electronic component of IXYS
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Part No.DE475-102N21A
Manufacturer: IXYS
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 1000V, 24A RF Power MOSFET
Datasheet: DE475-102N21A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 68.9978 ea
Line Total: USD 69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 68.9978
5 : USD 63.4426
10 : USD 59.0444
50 : USD 56.7856

0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 73.1455

   
Manufacturer
Product Category
Transistor Polarity
Id - Continuous Drain Current
Maximum Operating Temperature
Brand
Drain Source Voltage Vds
Power Dissipation Pd
Operating Frequency Max
Rf Transistor Case
No. Of Pins
Svhc
Transistor Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DE475-102N21A from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DE475-102N21A and other electronic components in the RF MOSFET Transistors category and beyond.

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DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g V = 1000 V High dv/dt DSS Nanosecond Switching I = 24 A D25 30MHz Maximum Frequency R Symbol Test Conditions Maximum Ratings 0.45 DS(on) T = 25C to 150C V J 1000 V DSS P = 1800W DC T = 25C to 150C R = 1 M V J GS 1000 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 24 A D25 T = 25C, pulse width limited by T c JM I 144 A DM T = 25C c I 21 A AR T = 25C c E 30 mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 1800 W DC DRAIN T = 25C c P 730 W GATE DHS Derate 4.0W/C above 25C T = 25C c P 4.5 W DAMB R 0.08 C/W thJC SG1 SG2 SD1 SD2 R 0.20 C/W thJHS Features Symbol Test Conditions Characteristic Values T = 25C unless otherwise specified Isolated Substrate J high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 3 ma GS D V 1000 V DSS cycling capability IXYS advanced low Q process V = V , I = 4 ma g DS GS D V 3.5 4.4 5.5 V GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8 V T = 25C faster switching DS DSS J I 50 DSS A V = 0 T = 125C GS J Low R DS(on) 1 mA Very low insertion inductance (<2nH) V = 15 V, I = 0.5I GS D D25 R 0.45 DS(on) No beryllium oxide (BeO) or other haz- Pulse test, t 300S, duty cycle d 2% ardous materials V = 15 V, I = 0.5I , pulse test DS D D25 g 12 S fs Advantages T -55 +175 C Optimized for RF and high speed J switching at frequencies to 30MHz T 175 C JM Easy to mountno insulators needed High power density T -55 +175 C stg 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 3 g DE475-102N21A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 5500 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 190 pF oss f = 1 MHz C 52 pF rss Back Metal to any Pin C 46 pF stray T 5 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 5 ns on I = 0.5 I D DM R = 0.2 (External) T 5 ns d(off) G T 8 ns off Q 155 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 33 nC gs I = 0.5 I D D25 Q 84 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 21 A S Repetitive pulse width limited by T I JM 144 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, F S Q 0.6 C RM V = 100V R I 8 A RM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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