IXRFS M1 2 N10 0 RF Power MOSFET N-Channel Enhancement Mode Low Q g V = 1000 V Surface Mount Package DSS Nanosecond Switching I = 12 A D25 Symbol Test Conditions Maximum Ratings R 1.05 DS(on) T = 25C to 150C J V 1000 V DSS T = 25C to 150C R = 1 M V J GS 1000 V P = 900 W DGR DC Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 12 A D25 T = 25C, pulse width limited by T c JM I 72 A DM T = 25C c I 12 A AR T = 25C c E 30 mJ AR I I , di/dt A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 940 W DC T = 25C c P 425 W DHS DRAIN Derate 3.7W/C above 25C GATE T = 25C c P 4.5 W DAMB Symbol Test Conditions Characteristic Values SG1 SG2 SD1 SD2 T = 25C unless otherwise specified J min. typ. max. Features V = 0 V, I = 3 ma V GS D 1000 V DSS Isolated Substrate -High isolation voltage (>2500V) V = V , I = 250 a DS GS D V 4.0 4.7 5.5 V GS(th) -Excellent thermal transfer V = 20 V , V = 0 GS DC DS I 100 nA GSS -Increased temperature and power cycling capability V = 0.8 V T = 25C DS DSS J I 50 DSS A V = 0 T = 125C GS J 1 mA IXYS advanced low Q process g Low gate charge and capacitances V = 15 V, I = 0.5I GS D D25 R 1.05 DS(on) -Easier to drive Pulse test, t 300S, duty cycle d 2% -Faster switching R 0.14 C/W thJC Low R DS(on) R 0.34 C/W thJHS Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other haz- V = 15 V, I = 0.5I , pulse test DS D D25 g 6.7 8.0 S fs ardous materials T -55 +150 C J Advantages T 150 C JM Optimized for RF and high speed switching T -55 +150 C stg Easy to mountno insulators needed 1.6mm (0.062 in) from case for 10 s High power density T 300 C L Weight 5 g IXRFS M1 2 N10 0 RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 0.3 G C 2125 2500 2875 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 93 110 127 pF oss f = 1 MHz C 20 25 30 pF rss Back Metal to any Pin C 33 pF stray T 5 ns d(on) V = 15 V, V = 0.8 V T GS DS DSS 3 ns on I = 0.5 I D DM R = 0.2 (External) G T 5 ns d(off) T 8 ns off Q 77 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 16 nC gs I = 0.5 I D D25 Q 42 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 12 A S Repetitive pulse width limited by T JM I 72 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, Q F S 0.6 RM C V = 100V R I 7 A RM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the de- vice. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice.