IXRFS M1 8 N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 500 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 19 A D25 Symbol Test Conditions Maximum Ratings R 0.34 DS(on) T = 25C to 150C J V 500 V DSS P = 835 W DC T = 25C to 150C R = 1 M J GS V 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 19 A D25 T = 25C, pulse width limited by T c JM I 95 A DM T = 25C c I 19 A AR T = 25C c E 30 mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 835 W DC DRAIN T = 25C c GATE P 370 W DHS T = 25C amb P 3.0 W DAMB Symbol Test Conditions Characteristic Values SG1 SG2 SD1 SD2 (T = 25C unless otherwise specified) J min. typ. max. Features Isolated Substrate V = 0 V, I = 4 ma GS D V 500 V DSS high isolation voltage (>2500V) V = V , I = 250 V DS GS D 3.5 4.9 6.5 V GS(th) excellent thermal transfer Increased temperature and power V = 20 V , V = 0 GS DC DS I 100 nA GSS cycling capability V = 0.8V T = 25C I DS DSS J 50 A IXYS advanced Z-MOS process DSS V =0 T =125C GS J 1 mA Low gate charge and capacitances easier to drive V = 20 V, I = 0.5I GS D D25 R .32 .34 DS(on) faster switching Pulse test, t 300S, duty cycle d 2% Low R DS(on) R 0.15 thJC C/W Very low insertion inductance (<2nH) R 0.35 thJHS C/W No beryllium oxide (BeO) or other hazardous materials V = 50 V, I = 0.5I , pulse test DS D D25 g 5.0 5.4 6.0 S fs Advantages T -55 +150 C J Optimized for RF and high speed T 150 C Easy to mountno insulators needed JM High power density T -55 +150 C stg 1.6mm(0.062 in) from case for 10 s T 300 C L Weight 5 g IXRFS M1 8 N50 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 0.5 G C 1650 1950 2250 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 150 175 175 pF oss f = 1 MHz C 14 17 20 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM T R = 1 (External) 5 ns G d(off) T 6 ns off Q 42 nC g(on) V = 10 V, V = 0.5 V Q GS DS DSS 13 nC gs I = 0.5 I D D25 Q 20 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 19 A S Repetitive pulse width limited by T JM I 95 A SM I = I V =0 V, Pulse test, t 300s, duty cycle F s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the de- vice. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice.