IXZ2210N50L2 RF Power MOSFET N-channel enhancement mode linear RF power MOSFET V = 500 V DSS Ideal for class AB and C industrial, scienctifi , medical, and commercial applications. I = 10 A D25 Advantages Features High Performance RF Package Isolated Substrate Easy to mountno insulators needed high isolation voltage (>2500V) excellent thermal transfer DRAIN 2 DRAIN 1 Increased temperature and power cycling capability TM IXYS RF Low Capacitance Z-MOS Process Very low insertion inductance (<2nH) GATE 1 GATE 2 No beryllium oxide (BeO) or other hazardous materials SG1 SD1 SD2 SG2 Maximum Ratings Symbol Parameter Test Conditions Maximum Units Drain-source voltage T = 25C to 150C V J 500 DSS Drain-gate voltage T = 25C to 150C R = 1 M V J GS 500 DGR V Continuous V 20 GS Gate-source voltage Transient V 30 GSM Continuous drain current T = 25C c I 10 A D25 Package power dissipation per MOSFET T = 25C P c 270 DC P Dissipation to heat-sink per MOSFET T = 25C, Derate 2 W/C above 25C 200 W DHS c P Ambient power dissipation T = 25C 3 DAMB AMB R Thermal resistance junction to case 0.47 thJC C/W Thermal resistance junction to heat-sink R 0.65 thJHS T , T -55 to 150 J STG Operating and storage junction temperature range C 1.6mm(0.063 in) from case for 10 s T L Lead temperature 300 Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units Static V = 0 V, I = 4 ma GS D 500 V BV Breakdown voltage drain to source DSS V = 0.8V T = 25C DS DSS J 50 A I Drain leakage current V = 0 T =125C DSS GS J 1 mA V = 20 V , V = 0 GS DC DS 100 nA Gate leakage current I GSS V = 60 V, I = 0.5I , pulse test DS D D25 3.1 S g Transconductance fs V = V , I = 250 4.0 5.4 6.5 V DS GS D V Threshold voltage GS(th)IXZ2210N50L2 RF Power MOSFET Electrical Characteristics cont. Symbol Parameter Test Conditions Min Typ Max Units Dynamic V = 15 V, I = 0.5 I GS D D25 1 Drain to source ON resistance R DS(on) Pulse test, t 300S, duty cycle d 2% 611 pF Input capacitance C ISS 100 pF Output capacitance C OSS V = 0 V, V = 0.8 V , f = 1 MHz GS DS DSS 6 pF C Reverse transfer capacitance RSS 4 ns Turn-on delay time t D(ON) 3 ns Rise time t R V = 15 V, V = 0.8 V GS DS DSS 4 ns Turn-off delay time t D(OFF) 5 ns Fall time t F CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the de- vice. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site