IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 600 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 18 A D25 R Symbol Test Conditions Maximum Ratings 0.47 DS(on) T = 25C to 150C V J 600 V DSS P = 880 W DC T = 25C to 150C R = 1 M J GS V 600 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 18 A D25 T = 25C, pulse width limited by T c JM I 90 A DM T = 25C c I 18 A AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns DRAIN P 880 W DC GATE T = 25C, Derate 4.4W/C above 25C c P 440 W DHS T = 25C c P 3.0 W DAMB R 0.17 C/W thJC SG1 SG2 SD1 SD2 R 0.34 C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate (T = 25C unless otherwise specified) J high isolation voltage (>2500V) min. typ. max. excellent thermal transfer V = 0 V, I = 4 ma GS D Increased temperature and power V 600 V DSS cycling capability V = V , I = 250 V DS GS D 3.2 4.0 5.5 V GS(th) IXYS advanced Z-MOS process Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8V T = 25C DS DSS J I 50 A DSS faster switching V =0 T =125C GS J 1 mA Low R DS(on) Very low insertion inductance (<2nH) V = 15 V, I = 0.5I GS D D25 R 0.44 0.47 DS(on) Pulse test, t 300S, duty cycle d 2% No beryllium oxide (BeO) or other hazardous materials V = 50V, I = 0.5I , pulse test g DS D D25 4.0 5.2 S fs Advantages T -55 +175 C J Optimized for RF and high speed Easy to mountno insulators needed T 175 C JM High power density T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 3.5 g IXZ316N60 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 1 G C 1930 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 160 pF oss f = 1 MHz C 16 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM T R = 1 (External) 4 ns G d(off) T 6 ns off Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 18 A S Repetitive pulse width limited by T JM I 108 A SM I = I V =0 V, Pulse test, t 300s, duty cycle F s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at