X-On Electronics has gained recognition as a prominent supplier of L8550QLT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. L8550QLT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

L8550QLT1G Leshan

Name: L8550QLT1G
Brand: Leshan
SKU: L8550QLT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

L8550QLT1G electronic component of Leshan

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See Product Specifications

Part No.	L8550QLT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 800mA 25V SOT-23 (SOT-23-3) RoHS
Datasheet:	L8550QLT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0212 ea
Line Total: USD 0.21

Availability - 3656
Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ: 10 Multiples: 10
Pack Size: 10

L8550QLT1G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

3656

Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ : 10
Multiples : 10

10 : USD 0.0212
100 : USD 0.0171
300 : USD 0.0147
3000 : USD 0.0104
6000 : USD 0.0095
9000 : USD 0.0089

Specifications

Manufacturer

Leshan Leshan

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Leshan Leshan

Transistor Type

pnp pnp

Current - Collector Ic Max

800 mA 800 mA

Voltage - Collector Emitter Breakdown Max

25 V 25 V

Power - Max

225 mW 225 mW

Collector Cut-Off Current Icbo

150 nA 150 nA

Collector-Emitter Breakdown Voltage Vceo

25 V 25 V

Power Dissipation Pd

225 mW 225 mW

Collector Current Ic

800 mA 800 mA

Dc Current Gain Hfe@Ic Vce

- -

Transition Frequency Ft

- -

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

500 mV @800 mA , 80 mA 500 mV @800 mA , 80 mA

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

L8550QLT1G Alternative Parts

We are delighted to provide the L8550QLT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the L8550QLT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe L8550QLT1G is a PNP type Transistor manufactured by Leshan Radio Company, which has a 800mA current rating and a 25V breakdown voltage rating. It has an SOT-23-3 package type, which is a three-terminal surface mount package that measures 2.9 mm × 1.6 mm × 1.1 mm. This part also complies fully with the Restriction of Hazardous Substances (RoHS) standards. It is designed to be used in a variety of digital, linear, and switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
3656 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 10 Multiples : 10	10 : USD 0.0212 100 : USD 0.0171 300 : USD 0.0147 3000 : USD 0.0104 6000 : USD 0.0095 9000 : USD 0.0089

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