X-On Electronics has gained recognition as a prominent supplier of LMBTA44LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LMBTA44LT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LMBTA44LT1G Leshan

Name: LMBTA44LT1G
Brand: Leshan
SKU: LMBTA44LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LMBTA44LT1G electronic component of Leshan

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See Product Specifications

Part No.	LMBTA44LT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 200mA 400V SOT-23 (SOT-23-3) RoHS
Datasheet:	LMBTA44LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.041 ea
Line Total: USD 0.82

Availability - 667
Ship by Fri. 13 Dec to Wed. 18 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

LMBTA44LT1G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

667

Ship by Fri. 13 Dec to Wed. 18 Dec

MOQ : 20
Multiples : 20

20 : USD 0.041
200 : USD 0.0328
600 : USD 0.0282
3000 : USD 0.0255
9000 : USD 0.0231
21000 : USD 0.0219

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Transistor Type
npn npn

Current - Collector Ic Max
200 mA 200 mA

Voltage - Collector Emitter Breakdown Max
400 V 400 V

Power - Max
350 mW 350 mW

Collector Cut-Off Current Icbo
100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo
400 V 400 V

Power Dissipation Pd
350 mW 350 mW

Collector Current Ic
200 mA 200 mA

Dc Current Gain Hfe@Ic Vce
80@10 mA , 10V 80@10 mA , 10V

Transition Frequency Ft
50MHz 50MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
300 mV @50 mA , 5 mA 300 mV @50 mA , 5 mA

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LMBTA44LT1G Alternative Parts

We are delighted to provide the LMBTA44LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LMBTA44LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LMBTA44LT1G is a NPN type Bipolar Junction Transistor (BJT) manufactured by Leshan Radio Company. It is RoHS compliant and comes in a SOT-23-3 plastic package. This transistor is rated for maximum collector current of 200mA and maximum collector-emitter voltage of 400V. The LMBTA44LT1G is suitable for use as a switch, amplifier, or for small signal amplification.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
667 Ship by Fri. 13 Dec to Wed. 18 Dec MOQ : 20 Multiples : 20	20 : USD 0.041 200 : USD 0.0328 600 : USD 0.0282 3000 : USD 0.0255 9000 : USD 0.0231 21000 : USD 0.0219

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