X-On Electronics has gained recognition as a prominent supplier of MMF80R650PTH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MMF80R650PTH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MMF80R650PTH Magnachip

MMF80R650PTH electronic component of Magnachip
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See Product Specifications
Part No.MMF80R650PTH
Manufacturer: Magnachip
Category: MOSFETs
Description: Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Tube
Datasheet: MMF80R650PTH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
34: USD 0.989 ea
Line Total: USD 33.63 
Availability - 0
MOQ: 34  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 34
Multiples : 1
34 : USD 0.989

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Drain-Source On-Volt
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Package Type
Rad Hardened
Type
Gate-Source Voltage Max
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We are delighted to provide the MMF80R650PTH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMF80R650PTH and other electronic components in the MOSFETs category and beyond.

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MMF80R650P Datasheet MMF80R650P 800V 0.65 N-channel MOSFET Description MMF80R650P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit D Parameter Value Unit V T 850 V DS j,max R 0.65 DS(on),max V 3 V TH,typ G I 8 A D G Q 25.8 nC g,typ D S S Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMF80R650PTH 80R650P -55 ~ 150 TO-220F Tube Halogen Free 1 Mar. 2015 Revision 1.0 MagnaChip Semiconductor Ltd. MMF80R650P Datasheet Absolute Maximum Rating (Tc=25 unless otherwise specified) Parameter Symbol Rating Unit Note Drain Source voltage V 800 V DSS Gate Source voltage V 30 V GSS 8 A T =25 C (1) Continuous drain current I D 5.05 A T =100 C (2) Pulsed drain current I 24 A DM Power dissipation P 32 W D Single - pulse avalanche energy E 340 mJ AS MOSFET dv/dt ruggedness dv/dt 50 V/ns (3) Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T -55 ~150 stg Maximum operating junction T 150 j temperature 1) I limited by maximum junction temperature. D 2) Pulse width t limited by T P j,max 3) I I , V V SD D DS peak (BR)DSS Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case max R 3.9 /W thjc Thermal resistance, junction-ambient max R 62.5 /W thja 2 Mar. 2015 Revision 1.0 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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