TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2 APT100GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) T-Max conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coef cient. A built-in gate resistor ensures CE(ON) extremely reliable operation, even in the event of a short circuit fault. Low gate charge simpli es gate drive design and minimizes losses. G C E 1200V Field Stop Trench Gate: Low V CE(on) C Easy Paralleling Integrated Gate Resistor: Low EMI, High Reliability G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol APT100GN120B2 UNIT V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE 8 I Continuous Collector Current T = 25C 245 C1 C 8 I Continuous Collector Current T = 110C 100 Amps C2 C 1 Pulsed Collector Current I 300 CM Switching Safe Operating Area T = 150C 300A 1200V SSOA J P Total Power Dissipation 960 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 4mA, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 100A, T = 25C) 1.4 1.7 2.1 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 100A, T = 125C) 2.0 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 100 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 600 GES GE R Integrated Gate Resistor 7.5 G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7626 Rev A 12-2007APT100GN120B2 DYNAMIC CHARACTERISTICS Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 6500 Capacitance ies C Output Capacitance 365 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 280 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 V GEP 3 Q V = 15V Total Gate Charge 540 g GE V = 600V Q Gate-Emitter Charge 50 nC CE ge I = 100A Q Gate-Collector Mille) Charge C 295 gc 7 T = 150C, R = 4.3 , V = J G GE 300 SSOA Switching Safe Operating Area A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) 50 Turn-on Delay Time d(on) t V = 800V 50 Current Rise Time r CC ns V = 15V t Turn-off Delay Time GE 615 d(off) I = 100A t C f Current Fall Time 105 7 R = 1.0 4 E G Turn-on Switching Energy 11 on1 T = +25C 5 J E mJ Turn-on Switching Energy (Diode) 15 on2 6 E Turn-off Switching Energy 9.5 off t Inductive Switching (125C) Turn-on Delay Time 50 d(on) t V = 800V Current Rise Time 50 r CC ns t V = 15V Turn-off Delay Time d(off) GE 725 I = 100A t Current Fall Time C 210 f 7 R = 1.0 4 4 E G Turn-on Switching Energy 12 on1 T = +125C 55 J E Turn-on Switching Energy (Diode) mJ 22 on2 66 E Turn-off Switching Energy 14 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .13 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 6.1 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) 8 Continuous Current limited by package lead temperature. Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-7626 Rev A 12-2007