TO-247 TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation 600V, 10A Low Gate Charge 50 kHz operation 600V, 16A C Ultrafast Tail Current shutoff RBSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT13GP120BDQ1(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 20 GE I Continuous Collector Current T = 25C 41 C1 C I Continuous Collector Current T = 110C 20 Amps C2 C 1 I Pulsed Collector Current T = 150C 50 CM C Reverse Bias Safe Operating Area T = 150C RBSOA 50A 960V J P Total Power Dissipation Watts 250 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) 3 4.5 6 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 13A, T = 25C) 3.3 3.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 13A, T = 125C) 3.0 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 500 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 3000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT13GP120BDQ1(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1145 Input Capacitance Capacitance ies C pF 90 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 15 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 55 g GE V = 600V Q nC Gate-Emitter Charge 8 CE ge I = 13A Q C 26 Gate-Collector Mille) Charge gc T = 150C, R = 5, V = J G GE Switching Safe Operating Area SSOA A 50 15V, L = 100H,V = 960V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 9 V = 600V t Current Rise Time 12 CC r ns t V = 15V Turn-off Delay Time d(off) GE 28 I = 13A t C Current Fall Time 34 f R = 5 4 G E Turn-on Switching Energy 115 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 330 on2 6 E Turn-off Switching Energy 165 off t Inductive Switching (125C) Turn-on Delay Time d(on) 9 t V = 600V Current Rise Time 12 r CC ns V = 15V t Turn-off Delay Time GE d(off) 70 I = 13A t C Current Fall Time f 200 R = 5 4 4 G E Turn-on Switching Energy 225 on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 710 on2 6 E Turn-off Switching Energy 840 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .50 JC C/W R Junction to Case (DIODE) 1.18 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 050-7446 Rev B 5-2005