TO-247 TYPICAL PERFORMANCE CURVES APT13GP120B S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B POWER MOS 7 IGBT 3 D PAK S The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch C G E Through Technology this IGBT is ideal for many high frequency, high voltage switching G applications and has been optimized for high frequency switchmode power supplies. C E Low Conduction Loss 100 kHz operation 600V, 10A Low Gate Charge 50 kHz operation 600V, 16A C Ultrafast Tail Current shutoff RBSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT13GP120B S(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 41 C1 C I Continuous Collector Current T = 110C 20 Amps C2 C 1 I Pulsed Collector Current 50 CM Reverse Bias Safe Operating Area T = 150C RBSOA 50A 960V J P Total Power Dissipation Watts 250 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) 3 4.5 6 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 13A, T = 25C) 3.3 3.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 13A, T = 125C) 3.0 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 500 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 3000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT13GP120B S(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1145 Input Capacitance Capacitance ies C pF 90 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 15 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 55 g GE V = 600V Q nC Gate-Emitter Charge 8 CE ge I = 13A Q C 26 Gate-Collector Mille) Charge gc T = 150C, R = 5, V = J G GE RBSOA Reverse Bias Safe Operating Area A 50 15V, L = 100H,V = 960V CE t Inductive Switching (25C) d(on) Turn-on Delay Time 9 V = 600V t Current Rise Time 12 CC r ns t V = 15V Turn-off Delay Time d(off) GE 28 I = 13A t C Current Fall Time 34 f R = 5 4 G E Turn-on Switching Energy 115 on1 T = +25C J 5 E J Turn-on Switching Energy (Diode) 330 on2 6 E Turn-off Switching Energy 165 off t Inductive Switching (125C) Turn-on Delay Time d(on) 9 t V = 600V Current Rise Time 12 r CC ns V = 15V t Turn-off Delay Time GE d(off) 70 I = 13A t C Current Fall Time f 200 R = 5 4 4 G E Turn-on Switching Energy 225 on1 T = +125C J 55 E J Turn-on Switching Energy (Diode) 710 on2 6 E Turn-off Switching Energy 840 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .50 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained herein. 050-7412 Rev E 1-2006