TO-247 TYPICAL PERFORMANCE CURVES APT20GN60B S(G) APT20GN60B APT20GN60S APT20GN60B(G) APT20GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra (B) low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a 3 D PAK slightly positive V temperature coef cient. Low gate charge simpli es gate drive CE(ON) design and minimizes losses. (S) C G E G C 600V Field Stop E Trench Gate: Low V CE(on) Easy Paralleling C 6s Short Circuit Capability 175C Rated G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol UNIT APT20GN60B S(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 40 C1 C I Continuous Collector Current T = 110C 24 Amps C2 C 1 Pulsed Collector Current T = 175C I 60 C CM Switching Safe Operating Area T = 175C SSOA 60A 600V J P Total Power Dissipation Watts 136 D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 2mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 290A, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 20A, T = 25C) 1.1 1.5 1.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 20A, T = 125C) 1.7 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 25 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) 300 nA GES GE R Intergrated Gate Resistor N/A G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT20GN60B S(G) Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 1110 Capacitance ies C Output Capacitance 50 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 35 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 V GEP 3 V = 15V Q 120 Total Gate Charge GE g V = 300V Q 10 nC Gate-Emitter Charge CE ge I = 20A Q C 70 Gate-Collector Mille) Charge gc 7 T = 175C, R = 4.3 , V = J G GE SSOA Switching Safe Operating Area 60 A 15V, L = 100H,V = 600V CE V = 360V, V = 15V, CC GE s SCSOA Short Circuit Safe Operating Area 6 7 T = 150C, R = 4.3 J G t Inductive Switching (25C) 9 d(on) Turn-on Delay Time t V = 400V 10 Current Rise Time r CC ns t V = 15V 140 d(off) Turn-off Delay Time GE I = 20A t 95 Current Fall Time C f 7 R = 4.3 4 E G Turn-on Switching Energy 230 on1 T = +25C 5 E J J Turn-on Switching Energy (Diode) 260 on2 6 E 580 Turn-off Switching Energy off t Inductive Switching (125C) Turn-on Delay Time 9 d(on) t V = 400V Current Rise Time 10 r CC ns t V = 15V Turn-off Delay Time d(off) 160 GE I = 20A t Current Fall Time C 130 f 7 R = 4.3 4 4 E G 250 Turn-on Switching Energy on1 T = +125C 55 E J 450 Turn-on Switching Energy (Diode) J on2 66 E 750 Turn-off Switching Energy off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) 1.1 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 050-7614 Rev B 7-2009