TO-247 TYPICAL PERFORMANCE CURVES APT30GN60B S(G) APT30GN60B APT30GN60S APT30GN60B(G) APT30GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra (B) low V and are ideal for low frequency applications that require absolute minimum CE(ON) 3 D PAK conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coef cient. Low gate charge simpli es gate drive CE(ON) (S) C design and minimizes losses. G E G C E 600V Field Stop Trench Gate: Low V CE(on) Easy Paralleling C 6s Short Circuit Capability 175C Rated G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol UNIT APT30GN60B S(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 63 C1 C I Continuous Collector Current T = 110C 37 Amps C2 C 1 Pulsed Collector Current I 90 CM Switching Safe Operating Area T = 150C SSOA 90A 600V J P Total Power Dissipation Watts 203 D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 2mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 430A, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 30A, T = 25C) 1.1 1.5 1.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 30A, T = 125C) 1.7 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 25 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 300 GES GE R Intergrated Gate Resistor N/A G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - APT30GN60B S(G) DYNAMIC CHARACTERISTICS Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 1750 Capacitance ies C Output Capacitance 70 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 50 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.0 V GEP 3 V = 15V Q 165 Total Gate Charge GE g V = 300V Q 10 nC Gate-Emitter Charge CE ge I = 30A Q Gate-Collector Mille) Charge C 90 gc 7 T = 150C, R = 4.3 , V = J G GE Switching Safe Operating Area SSOA 90 A 15V, L = 100H,V = 600V CE V = 360V, V = 15V, CC GE s SCSOA 6 Short Circuit Safe Operating Area 7 T = 150C, R = 4.3 J G t Inductive Switching (25C) 12 d(on) Turn-on Delay Time t V = 400V 14 Current Rise Time r CC ns t V = 15V 155 d(off) Turn-off Delay Time GE I = 30A t C 55 Current Fall Time f 7 R = 4.3 4 E G Turn-on Switching Energy 525 on1 T = +25C 5 E J J Turn-on Switching Energy (With Diode) 565 on2 6 E Turn-off Switching Energy 700 off t Inductive Switching (125C) Turn-on Delay Time d(on) 12 t V = 400V Current Rise Time 14 r CC ns t V = 15V Turn-off Delay Time d(off) 180 GE I = 30A t Current Fall Time C 75 f 7 R = 4.3 4 4 E G 555 Turn-on Switching Energy on1 T = +125C 55 E J Turn-on Switching Energy (Wtih Diode) 950 J on2 66 E Turn-off Switching Energy 895 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .74 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and diode leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G Gint Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-7616 Rev B 7-2009