X-On Electronics has gained recognition as a prominent supplier of APT30GP60BDQ1G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. APT30GP60BDQ1G IGBT Transistors are a product manufactured by Microchip. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

APT30GP60BDQ1G Microchip

APT30GP60BDQ1G electronic component of Microchip
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See Product Specifications
Part No.APT30GP60BDQ1G
Manufacturer: Microchip
Category: IGBT Transistors
Description: IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
Datasheet: APT30GP60BDQ1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.888 ea
Line Total: USD 8.89 
Availability - 1186
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1186
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 8.888
500 : USD 8.085
1000 : USD 7.953
5000 : USD 7.777

9
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 16.73
2 : USD 13.006
4 : USD 12.292

   
Manufacturer
Product Category
Power Dissipation
Technology
Technology
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We are delighted to provide the APT30GP60BDQ1G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT30GP60BDQ1G and other electronic components in the IGBT Transistors category and beyond.

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The APT30GP60BDQ1G with IGBT Transistors Insulated Gate Bipolar Transistor PT Power MOS 7 Combi is a hybrid device from Microchip that combines a Power MOSFET and two IGBT transistors in an innovative packaged form. This device is designed to minimize gate-cracking losses, improve thermal performance, and reduce complexity for designs requiring high voltage, high current applications. This part is designed for use in power supplies, UPS, renewable energy, and industrial automation applications. The rated Vce of this device is 600V and the continuous output current is 30A. It features a temperature rating of 175°C and a short-circuit SOA recovery time of 100ns. The APT30GP60BDQ1G is available in DIP-7 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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