TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.UL Recognize file E145592 ISOTOP Low Conduction Loss RBSOA Rated Low Gate Charge C Ultrafast Tail Current shutoff G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT35GP120JDQ2 V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 64 C1 C I Continuous Collector Current T = 110C 26 Amps C2 C 1 I Pulsed Collector Current 140 CM Reverse Bias Safe Operating Area T = 150C RBSOA 140A 960V J P Total Power Dissipation Watts 284 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 350A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) 3 4.5 6 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 35A, T = 25C) 3.3 3.9 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 35A, T = 125C) 3 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 350 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 3000 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA GES 100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT35GP120JDQ2 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 3240 Input Capacitance Capacitance ies C pF 250 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 31 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 150 g GE V = 600V Q nC Gate-Emitter Charge 21 CE ge I = 35A Q C 60 Gate-Collector Mille) Charge gc T = 150C, R = 4.3, V = J G GE Reverse Bias Safe Operating Area RBSOA A 140 15V, L = 100H,V = 960V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 16 V = 600V t Current Rise Time 20 CC r ns t V = 15V Turn-off Delay Time d(off) GE 95 I = 35A t C Current Fall Time 40 f R = 4.3 4 G E Turn-on Switching Energy 750 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 1305 on2 6 E Turn-off Switching Energy 680 off t Inductive Switching (125C) Turn-on Delay Time d(on) 16 t V = 600V Current Rise Time 20 r CC ns V = 15V t Turn-off Delay Time GE d(off) 145 I = 35A t C Current Fall Time f 75 R = 4.3 4 4 G E Turn-on Switching Energy 750 on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 2130 on2 6 E Turn-off Switching Energy 1745 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .44 JC C/W R Junction to Case (DIODE) 1.10 JC W gm Package Weight 29.2 T V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts 2500 Isolation 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specications and information contained h 050-7631 Rev A 11-2005