TO-247 APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E is achieved off 3 through leading technology silicon design and lifetime control processes. A reduced E - D PAK off V tradeoff results in superior ef ciency compared to other IGBT technologies. Low CE(ON) gate charge and a greatly reduced ratio of C /C provide excellent noise immunity, short res ies delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT36GA60B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Very Low E for maximum ef ciency Half bridge off Ultra low C for improved noise immunity High power PFC boost res Low conduction loss Welding Low gate charge UPS, solar, and other inverters Increased intrinsic gate resistance for low EMI High frequency, high ef ciency industrial RoHS compliant Absolute Maximum Ratings Symbol Parameter Ratings Unit Collector Emitter Voltage 600 V V ces I Continuous Collector Current T = 25C 65 C1 C A I Continuous Collector Current T = 100C 36 C2 C 1 I Pulsed Collector Current 109 CM 2 V Gate-Emitter Voltage 30 V GE P Total Power Dissipation T = 25C 290 W D C SSOA Switching Safe Operating Area T = 150C 109A 600V J T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for Soldering: 0.063 from Case for 10 Seconds 300 L Static Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit V Collector-Emitter Breakdown Voltage V = 0V, I = 1.0mA 600 BR(CES) GE C V = 15V, T = 25C 2.0 2.5 GE J V V Collector-Emitter On Voltage CE(on) I = 20A T = 125C 1.9 C J V Gate Emitter Threshold Voltage V =V , I = 1mA 3 4.5 6 GE(th) GE CE C T = 25C 250 V = 600V, CE J I Zero Gate Voltage Collector Current A CES V = 0V T = 125C 2500 GE J I Gate-Emitter Leakage Current V = 30V 100 nA GES GS Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance - - 0.43 C/W JC W Package Weight - 5.9 - g T Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 inlbf Microsemi Website - APT36GA60B Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 2880 ies C Output Capacitance 226 V = 0V, V = 25V oes GE CE pF C Reverse Transfer Capacitance 328 f = 1MHz res Q Total Gate Charge Gate Charge 102 g Q Gate-Emitter Charge V = 15V 18 ge GE V = 300V nC CE Q Gate- Collector Charge gc I = 20A 34 C 4 T = 150C, R = 10 , V = 15V, J G GE SSOA Switching Safe Operating Area 109 A L= 100uH, V = 600V CE t Turn-On Delay Time Inductive Switching (25C) 16 d(on) t Current Rise Time V = 400V 14 r CC ns t Turn-Off Delay Time V = 15V 122 d(off) GE t Current Fall Time I = 20A 77 f C 4 E Turn-On Switching Energy 307 R = 10 on2 G J 6 254 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 14 d(on t Current Rise Time V = 400V 15 r CC ns t Turn-Off Delay Time V = 15V 149 d(off) GE t Current Fall Time 113 I = 20A f C 4 E Turn-On Switching Energy 508 R = 10 on2 G J 6 E Turn-Off Switching Energy 439 T = +125C off J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6327 Rev C 5 - 2011