TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2(G) 1200V APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-264 The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High Freq. Switching to 50KHz Low Tail Current Ultra Low Leakage Current C RBSOA and SCSOA Rated G Intergrated Gate Resistor: Low EMI, High Reliability E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT50GT120LRDQ2(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE 8 I Continuous Collector Current T = 25C 106 C1 C I Continuous Collector Current T = 110C 50 Amps C2 C 1 I Pulsed Collector Current T = 150C 150 CM C Switching Safe Operating Area T = 150C SSOA 150A 1200V J P Total Power Dissipation Watts 694 D TO-264 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 3mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2mA, T = 25C) 4.5 5.5 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 2.7 3.2 3.7 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 4.0 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 300 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 300 GES GE R Intergrated Gate Resistor 5 G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50GT120LRDQ2(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 2500 ies C pF Output Capacitance V = 0V, V = 25V 250 oes GE CE C f = 1 MHz Reverse Transfer Capacitance 155 res V V Gate-to-Emitter Plateau Voltage Gate Charge 7.5 GEP 3 Q V = 15V Total Gate Charge 240 g GE V = 600V Q nC Gate-Emitter Charge CE 20 ge I = 50A Q C Gate-Collector Mille) Charge 110 gc 7 T = 150C, R = 1.0 , V = J G GE Switching Safe Operating Area SSOA 150 A 15V, L = 100H, V = 1200V CE t Inductive Switching (25C) Turn-on Delay Time d(on) 23 t V = 800V Current Rise Time 50 r CC ns t V = 15V Turn-off Delay Time d(off) GE 215 I = 50A t C Current Fall Time 26 f 7 R = 1.0 4 E G Turn-on Switching Energy 3585 on1 T = +25C 5 J E J Turn-on Switching Energy (Diode) 4835 on2 6 E Turn-off Switching Energy 1910 off t Inductive Switching (125C) Turn-on Delay Time 23 d(on) t V = 800V Current Rise Time 50 r CC ns V = 15V t Turn-off Delay Time GE d(off) 255 I = 50A t C Current Fall Time 50 f 7 R = 1.0 4 4 E G 3580 Turn-on Switching Energy on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 6970 on2 6 E Turn-off Switching Energy 2750 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .18 JC C/W R Junction to Case (DIODE) .61 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. G G(int) 8 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specications and information contained herein. 052-6271 Rev A 8-2005