TO-247 APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E is achieved off through leading technology silicon design and lifetime control processes. A reduced E - off 3 D PAK V tradeoff results in superior ef ciency compared to other IGBT technologies. Low CE(ON) gate charge and a greatly reduced ratio of C /C provide excellent noise immunity, short res ies delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT68GA60B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Very Low E for maximum ef ciency Half bridge off Ultra low C for improved noise immunity High power PFC boost res Low conduction loss Welding Low gate charge UPS, solar, and other inverters Increased intrinsic gate resistance for low EMI High frequency, high ef ciency industrial RoHS compliant Absolute Maximum Ratings Symbol Parameter Ratings Unit Collector Emitter Voltage 600 V V ces 7 I Continuous Collector Current T = 25C 121 C1 C A I Continuous Collector Current T = 100C 68 C2 C 1 I Pulsed Collector Current 202 CM 2 V Gate-Emitter Voltage 30 V GE P Total Power Dissipation T = 25C 520 W D C SSOA Switching Safe Operating Area T = 150C 202A 600V J T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for Soldering: 0.063 from Case for 10 Seconds 300 L Static Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit V Collector-Emitter Breakdown Voltage V = 0V, I = 1.0mA 600 BR(CES) GE C V = 15V, T = 25C 2.0 2.5 J GE V V Collector-Emitter On Voltage CE(on) I = 40A T = 125C 1.9 C J V Gate Emitter Threshold Voltage V =V , I = 1mA 3 4.5 6 GE(th) GE CE C T = 25C 250 V = 600V, CE J I Zero Gate Voltage Collector Current A CES V = 0V T = 125C 2500 GE J I Gate-Emitter Leakage Current V = 30V 100 nA GES GS Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance - - 0.24 C/W JC W Package Weight - 5.9 - g T Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 inlbf Microsemi Website - APT68GA60B S Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 5230 ies C Output Capacitance 526 V = 0V, V = 25V pF oes GE CE C Reverse Transfer Capacitance 59 f = 1MHz res 3 Q Total Gate Charge Gate Charge 198 g Q Gate-Emitter Charge V = 15V 32 ge GE nC V = 300V CE Q Gate- Collector Charge 66 gc I = 40A C 4 T = 150C, R = 4.7 , V = 15V, J G GE SSOA Switching Safe Operating Area 202 A L= 100uH, V = 600V CE t Turn-On Delay Time Inductive Switching (25C) 21 d(on) t Current Rise Time V = 400V 27 r CC ns t Turn-Off Delay Time V = 15V 133 d(off) GE t Current Fall Time I = 40A 88 f C 4 E Turn-On Switching Energy 715 R = 4.7 on2 G J 6 607 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 20 d(on t Current Rise Time V = 400V 26 r CC ns t Turn-Off Delay Time V = 15V 175 d(off) GE t Current Fall Time 129 I = 40A f C 4 E Turn-On Switching Energy 1117 R = 4.7 on2 G J 6 E Turn-Off Switching Energy 1025 T = +125C off J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off 7 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6326 Rev D 6 - 2011