MRF586 Microchip

MRF586 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C A 45 D DESCRIPTION: E The MRF586 is a High Frequency F Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier H G Applications. MAXIMUM RATINGS MINIMUM MAXIMUM DIM I 200 mA inches / mm inches / mm C A .200 / 5.080 V 17 V B .029 / 0.740 .045 / 1.140 CE .028 / 0.720 .034 / 0.860 C O D .335 / 8.510 .370 / 9.370 P 2.5 W T = 50 C C DISS .305 / 7.750 .335 / 8.500 E O O .240 / 6.100 .260 / 6.600 F T -65 C to +200 C J .500 / 12.700 G .016 / 0.407 .020 / 0.508 O O H -65 C to +200 C T STG 1 = EMITTER 2 = BASE O 3 = COLLECTOR(CASE) 70 C/W JC NONE O CHARACTERISTICS T = 25 C A SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 5.0 mA 17 V CEO C BV I = 1.0 mA 34 V C CBO 2.5 BV I = 100 A V EBO E V = 10 V 50 I A CBO CB V = 5.0 V I = 50 mA 50 200 h --- FE CE C f V = 15 V I = 90 mA f = 500 MHz 4500 MHz t CE C C V = 10 V f = 1.0 MHz 2.2 pF CB OB V = 15 V I = 90 mA f = 300 MHz 3.0 NF dB CE C V = 15 V I = 90 mA f = 500 MHz -65 T dB B3 CE C D V = 15 V I = 90 mA f = 500 MHz -120 CE C dB V IN G V = 15 V I = 90 mA f = 500 MHz 14.5 dB CE C Umax A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 1/1 Specifications are subject to change without notice.