MS1202 Microchip

MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS P = 7.0 W OUT G = 8.4 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 136 MHz frequency band and 28 volt FM ground station applications. Gold metalization and emitter ballast resistors provide long term product ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit V Collector - Base Voltage 65 V CBO V Collector - Emitter Voltage 35 V CEO V Emitter - Base Voltage 4.0 V EBO P Device Dissipation 15 W DISS TJ Junction Temperature 200 C IC Device Current 1.0 A T Storage Temperature -65 to +200 STG C Thermal Data R Thermal Resistance Junction-case 11.7 C/W TH(J-C) Rev A January 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1202 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC Value Symbol Test Conditions Unit Min. Typ. Max. BV I = 200 mA V = 0 mA 65 --- --- V ces C BE BV I = 200 mA I =0 35 --- --- V ceo C B BV I = 5 mA I = 0 mA 4 --- --- V ebo E C I V = 30 V I = 0 mA --- --- 1.0 mA cbo CB E H V = 5 V I = 100 mA 5 --- 150 --- FE CE C DYNAMIC Value Symbol Test Conditions Unit Min. Typ. Max. P f =175 MHz V=28V 7.0 --- --- W OUT CE G f =175 MHz V=28V 8.4 --- --- dB P CE f =175 MHz V=28V 60 % c CE Cob f =1 MHz V=30V --- --- 15 pF CE Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.