Preliminary Automotive LPDDR2 SDRAM Features Automotive LPDDR2 SDRAM EDB4432BBBJ Options Marking Features Density/Page Size Ultra-low-voltage core and I/O power supplies 4Gb/1-CS - single die 44 Frequency range Organization 53310 MHz (data rate range: 106620 Mb/s/pin) x32 32 4n prefetch DDR architecture V /V /V : 1.8V/1.2V/1.2V B DD1 DD2 DDQ 8 internal banks for concurrent operation Revision Multiplexed, double data rate, command/address Single die B inputs commands entered on each CK t/CK c FBGA green package edge 10mm x 11.5mm x 0.75mm, 134- BJ Bidirectional/differential data strobe per byte of ball data (DQS t/DQS c) Timing cycle time Programmable READ and WRITE latencies (RL/WL) 1.875ns RL = 8 -1D Burst length: 4, 8 and 16 Special options Per-bank refresh for concurrent operation Automotive grade (Package-level A Auto temperature-compensated self refresh burn-in) (ATCSR) by built-in temperature sensor Operating temperature range Partial-array self refresh (PASR) From 40C to +85C IT Deep power-down mode (DPD) From 40C to +105C AT Selectable output drive strength (DS) 2 From 40C to +125C UT Clock-stop capability Lead-free (RoHS-compliant) and halogen-free 1. When Tc >105C, self-refresh mode is not Notes: packaging available. 2. UT option use based on automotive usage model. Please contact Micron sales repre- Table 1: Key Timing Parameters sentative if you have questions. Speed Clock Rate Data Rate Grade (MHz) (Mb/s/pin) RL WL 1D 533 1066 8 4 Table 2: S4 Configuration Addressing Architecture 128 Meg x 32 Die configuration 16 Meg x 32 x 8 banks Row addressing 16K A 13:0 Column addressing 1K A 9:0 PDF: X26P4QTWDSPK-13-10196 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 2e0e auto lpddr2.pdf Rev. A 11/15 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Microns production data sheet specifications.Preliminary Automotive LPDDR2 SDRAM Features Figure 1: LPDDR2 Part Numbering - ED B 44 32 B B BJ -1D A AT - F D Micron Technology Packing Media D = Dry Pack (Tray) Type R = Tape and Reel D = Packaged device Environment Code Product Family F = Lead-free (RoHS-compliant) B = Mobile LPDDR2 SDRAM and halogen-free Density/Chip Select Operating Temperature 44 = 4Gb/1-CS IT = 40C to +85C AT = 40C to +105C Organization UT = 40C to +125C 32 = x32 Special Options Power Supply Interface A = Automotive grade B = V = 1.8V, V = V = 1.2V, DD1 DD2 DDQ S4B device, HSUL Speed 1D = 1066 Mb/s Revision Package BJ = 134-ball WFBGA (10mm x 11.5mm) FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. Table 3: Package Codes and Descriptions Package Die per Solder Ball Code Ball Count Ranks Channels Size (mm) Package Composition BJ 134 1 1 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 1. SDP = single-die package Notes: 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). PDF: X26P4QTWDSPK-13-10196 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 2e0e auto lpddr2.pdf Rev. A 11/15 EN 2015 Micron Technology, Inc. All rights reserved.