X-On Electronics has gained recognition as a prominent supplier of BSH108,215 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSH108,215 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSH108,215 Nexperia

BSH108,215 electronic component of Nexperia
BSH108,215 Nexperia
BSH108,215 MOSFETs
BSH108,215  Semiconductors

Images are for reference only
See Product Specifications
Part No. BSH108,215
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
Datasheet: BSH108,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5075 ea
Line Total: USD 0.51 
Availability - 16865
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3443
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ : 5
Multiples : 5
5 : USD 0.2903
50 : USD 0.2292
150 : USD 0.1742
500 : USD 0.1313
3000 : USD 0.1181
6000 : USD 0.1115

16865
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5075
10 : USD 0.3212
100 : USD 0.1524
1000 : USD 0.1177
3000 : USD 0.0858
9000 : USD 0.0847
24000 : USD 0.0814

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSH108,215 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSH108,215 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BSH108 N-channel enhancement mode eld-effect transistor Rev. 02 25 October 2000 Product specication M3D088 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using 1 TrenchMOS technology. Product availability: BSH108 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Battery management High speed switch c c Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 Top view MSB003 SOT23 1. TrenchMOS is a trademark of Royal Philips Electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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