X-On Electronics has gained recognition as a prominent supplier of BSH111BKR MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSH111BKR MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSH111BKR Nexperia

BSH111BKR electronic component of Nexperia
BSH111BKR Nexperia
BSH111BKR MOSFETs
BSH111BKR  Semiconductors

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See Product Specifications
Part No. BSH111BKR
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 55V; 0.13A; 364mW; SOT23
Datasheet: BSH111BKR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1672 ea
Line Total: USD 0.17 
Availability - 20693
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
186240
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0329
9000 : USD 0.032
15000 : USD 0.0317
30000 : USD 0.0312
60000 : USD 0.0304

4179
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0769
100 : USD 0.062
300 : USD 0.0544
3000 : USD 0.0468
6000 : USD 0.0424
9000 : USD 0.0401

20693
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1672
10 : USD 0.1177
100 : USD 0.0517
1000 : USD 0.0462
3000 : USD 0.0429
9000 : USD 0.0363
24000 : USD 0.0308
45000 : USD 0.0297

2716
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 0.28
10 : USD 0.2002
50 : USD 0.1288
100 : USD 0.1052
347 : USD 0.0493
954 : USD 0.0466
9000 : USD 0.0454

61110
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0476
6000 : USD 0.0395
9000 : USD 0.0391
15000 : USD 0.031

135
Ship by Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6637
10 : USD 0.3318
25 : USD 0.2987
50 : USD 0.2489
75 : USD 0.224

   
Manufacturer
Product Category
Polarisation
Mounting
Kind Of Package
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSH111BKR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSH111BKR and other electronic components in the MOSFETs category and beyond.

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BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 3 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 55 V DS j V gate-source voltage -10 - 10 V GS I drain current V = 4.5 V T = 25 C 1 - - 210 mA D GS amb V = 4.5 V T = 25 C - - 335 mA GS sp Static characteristics R drain-source on-state V = 4.5 V I = 200 mA T = 25 C - 2.3 4 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia BSH111BK 55 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSH111BK TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 BSH111BK %4T 1 % = placeholder for manufacturing site code BSH111BK All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 November 2014 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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