BSH111,215 Nexperia

BSH111 N-channel enhancement mode eld-effect transistor Rev. 02 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications Battery management High speed switch Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) d 3 2 source (s) 3 drain (d) g MBB076 s 12 Top view MSB003 SOT23BSH111 Philips Semiconductors N-channel enhancement mode eld-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) 25 C T 150 C - 55 V DS j I drain current (DC) T =25 C V = 4.5 V - 335 mA D sp GS P total power dissipation T =25 C - 0.83 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 4.5 V I = 500 mA 2.3 4.0 DSon GS D V = 2.5 V I = 75 mA 2.4 5.0 GS D V = 1.8 V I = 75 mA 3.1 8.0 GS D 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 55 V DS j V drain-gate voltage (DC) 25 C T 150 C R =20k -55 V DGR j GS V gate-source voltage - 10 V GS I drain current (DC) T =25 C V = 4.5 V - 335 mA D sp GS Figure 2 and 3 T = 100 C V = 4.5 V Figure 2 - 212 mA sp GS I peak drain current T =25 C pulsed t 10 s - 1.3 A DM sp p Figure 3 P total power dissipation T =25 C Figure 1 - 0.83 W tot sp T storage temperature - 65 +150 C stg T junction temperature - 65 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 335 mA S sp I peak source (diode forward) current T =25 C pulsed t 10 s - 1.3 A SM sp p 9397 750 09629 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 26 April 2002 2 of 13