X-On Electronics has gained recognition as a prominent supplier of NX7002BKXBZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. NX7002BKXBZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NX7002BKXBZ Nexperia

NX7002BKXBZ electronic component of Nexperia
NX7002BKXBZ Nexperia
NX7002BKXBZ MOSFETs
NX7002BKXBZ  Semiconductors

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See Product Specifications
Part No. NX7002BKXBZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 60V dual N-channel Trench MOSFET
Datasheet: NX7002BKXBZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15000: USD 0.0754 ea
Line Total: USD 1131 
Availability - 14550
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 15000  Multiples: 15000
Pack Size: 15000
Availability Price Quantity
3108
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 0.1986
10 : USD 0.1748
30 : USD 0.1645
100 : USD 0.1519
500 : USD 0.1129
1000 : USD 0.1102

28986
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4013
10 : USD 0.2488
100 : USD 0.1512
500 : USD 0.1045
1000 : USD 0.0847
2500 : USD 0.0825
5000 : USD 0.0792
10000 : USD 0.0693
25000 : USD 0.0649

14550
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 15000
Multiples : 15000
15000 : USD 0.0754
25000 : USD 0.0706
35000 : USD 0.068
50000 : USD 0.0611

4335
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 596
Multiples : 1
596 : USD 0.1091
1000 : USD 0.0972
2000 : USD 0.091

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NX7002BKXBZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX7002BKXBZ and other electronic components in the MOSFETs category and beyond.

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NX7002BKXB 60 V, dual N-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 330 mA D GS sp V = 10 V T = 25 C 1 - - 260 mA GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 200 mA T = 25 C - 2.2 2.8 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm .Nexperia NX7002BKXB 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX7002BKXB DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code NX7002BKXB 00 01 01 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description NX7002BKXB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 June 2015 2 / 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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