PHT4NQ10T Nexperia

PHT4NQ10T TrenchMOS standard level FET Rev. 02 2 May 2002 Product data M3D087 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS technology. Product availability: PHT4NQ10T in SOT223. 2. Features TrenchMOS technology Very fast switching Surface mount package. 3. Applications Primary side switch in DC to DC converters High speed line driver Fast general purpose switch. 4. Pinning information Table 1: Pinning - SOT223, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 4 d 2 drain (d) 3 source (g) g 4 drain (d) s 123 MBB076 MSB002 - 1 Top view SOT223PHT4NQ10T Philips Semiconductors TrenchMOS standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) 25 C T 150 C - 100 V DS j I drain current (DC) T =25 C V =10V - 3.5 A D sp GS P total power dissipation T =25 C - 6.9 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 10 V I = 1.75 A DSon GS D T =25 C 200 250 m j T = 150 C - 575 m j 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) 25 C T 150 C - 100 V DS j V drain-gate voltage (DC) 25 C T 150 C R =20k - 100 V DGR j GS V gate-source voltage (DC) - 20 V GS I drain current (DC) T =25 C V =10V - 3.5 A D sp GS Figure 2 and 3 T = 100 C V =10V Figure 2 - 2.2 A sp GS I peak drain current T =25 C pulsed t 10 s -14 A DM sp p Figure 3 P total power dissipation T =25 C Figure 1 - 6.9 W tot sp T storage temperature - 65 +150 C stg T junction temperature - 65 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 3.5 A S sp I peak source (diode forward) current T =25 C pulsed t 10 s - 14 A SM sp p Avalanche ruggedness E non-repetitive drain-source avalanche unclamped inductive load I = 3.5 A -45 mJ DS(AL)S D energy t = 0.2 ms V 15 V R =50 p DD GS V = 10 V starting T =25 C GS j I peak non-repetitive drain-source - 3.5 A DS(AL)SM Figure 4 avalanche current 9397 750 09581 Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 2 May 2002 2 of 12