X-On Electronics has gained recognition as a prominent supplier of NJG1103F1-TE1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. NJG1103F1-TE1 RF Amplifier are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

NJG1103F1-TE1 Nisshinbo

NJG1103F1-TE1 electronic component of Nisshinbo
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Part No.NJG1103F1-TE1
Manufacturer: Nisshinbo
Category: RF Amplifier
Description: RF Amplifier 1.5/1.9 GHz LwNoise
Datasheet: NJG1103F1-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
Gain
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
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Series
Brand
Number Of Channels
Factory Pack Quantity :
Tradename
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We are delighted to provide the NJG1103F1-TE1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1103F1-TE1 and other electronic components in the RF Amplifier category and beyond.

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NJG1103F1 1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE 3 cellular phone and Japanese PHS a This (Best S . nFEATURES l +2.7V typ. l 3mA l 16dB 14dB l lHigh Input IP3 -4dBm -3dBm l +12dBm +11dBm lPackage nPIN CONFIGURATION F1 TYPE 1 6 1.LNAOUT 2 5 3.GND 4.GND 5.GND 3 4 Note: 1 - - is package orientation mark. 6.LNAIN 2.EXTIND Pin connection (Top View) MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm) typ. f=1.9+1.9001GHz typ. f=1.489+1.4891GHz High Output IP3 typ. f=1.9+1.9001GHz typ. f=1.489+1.4891GHz typ. f=1.9GHz 1.4dB typ. f=1.489GHz 1.2dB Low Noise Figure typ. f=1.9GHz typ. f=1.489GHz High small signal gain typ. Low current consumption Low voltage operation -1 is adopted MTP6 mall package of for 1.5GHz or 1.9GHz) amplifier can be tuned to wide frequency point. NJG1103F1 nd high IP3 operated by single low positive power supply. This amplifier provides low noise figure, high gain handsets. digital band 1.5GHz and 1.9GHz designed for GaAs MMIC F1 is a Low Noise Amplifier NJG110NJG1103F1 nABSOLUTE MAXIMUM RATINGS ( T = + 25 C , Z =Z ) a s l PARAMETER Drain Voltage V 5.0 V DD Input Power P V = V +1 0 dBm in DD P D T - 4 0 ~+ 85 C T - 55 ~ C stg nELECTRICAL CHARACTERISTICS 1 ( V T = + 25 C , Z =Z ) DD a s l PARAMETER 1.470 1.489 1.520 G Drain Voltage V 2.5 2.7 4.5 V DD I - 3.0 3.8 DD dB Gain Flatness G f= - 0.5 1.0 dB - 1.2 1.4 dB Pout at P -6.0 -2.0 - dBm f= -7.0 -4.0 - dBm LNAIN Port VSWR VSWR - 2.0 3.0 i VSWR - 2.0 3.0 o nELECTRICAL CHARACTERISTICS 2 ( V T = + 25 C , Z =Z ) DD a s l PARAMETER G Drain Voltage V 2.5 2.7 4.5 V DD I - 3.0 3.8 DD dB Gain Flatness G f= - 0.5 1.0 dB - 1.4 1.6 dB Pout at P -4.5 -0.5 - dBm f= -6.0 -3.0 - dBm LNAIN Port VSWR VSWR - 2.0 3.0 i VSWR - 2.0 3.0 o 2 - - LNAOUT Port VSWR Intercept Point Hz 1.9+1.9001G IIP3 Input 3rd Order Compression point -1dB Gain 1dB NF Noise Figure flat Hz 1.89~1.92G 16.0 14.0 12.0 Gain Small Signal Gain mA RF OFF Operating Current Hz 1.92 1.90 1.89 freq2 Operating Frequency UNITS MAX TYP MIN CONDITIONS SYMBOL , Circuit: Application 2 =50 =2.7V, f=1.9GHz, (1.9GHz Band) LNAOUT Port VSWR Intercept Point Hz 1.489+1.4891G IIP3 Input 3rd Order Compression point -1dB Gain 1dB NF Noise Figure flat Hz 1.47~1.52G 18.0 16.0 14.0 Gain Small Signal Gain mA RF OFF Operating Current Hz freq1 Operating Frequency UNITS MAX TYP MIN CONDITIONS SYMBOL , Circuit: Application 1 =50 =2.7V, f=1.489GHz, (1.5GHz Band) +125 Storage Temperature opr Operating Temperature mW 150 Power Dissipation 2.7 UNITS RATINGS CONDITIONS SYMBOL =50

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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