NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack- age designed for preamplifier input applications where high impedance is a requirement. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V EBO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A T Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW C T Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case, 10sec), T . . . . . . . . . . . . . . . +230C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics CollectorEmitter Breakdown Voltage V I = 100 A, I = 0 30 V (BR)CES C B Collector Cutoff Current I V = 30V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 8V, I = 0 100 nA EBO BE C Forward Current Transfer Ratio h I = 10mA, V = 5V 50k FE C CE I = 100mA, V = 5V 20k C CE CollectorEmitter Saturation Voltage V I = 100mA, I = 0.1mA 0.9 1.5 V CE(sat) C B BaseEmitter ON Voltage V I = 100mA, V = 5V, Note 1 1.45 2.00 V BE(on) C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Current GainBandwidth Product f I = 30mA, V = 10V, f = 100 125 MHz T C CE 50MHz Output Capacitance C I = 10mA, I = 0, f = 100MHz 2.5 pF cb CB E Noise Figure NF I = 1mA, V = 5V, R = 100k , 2 dB C CE S f = 1kHz .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max