NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P(H)IS Type Package Features: High Breakdown Voltage: V = 1500V Min CBO High Switching Speed Low Saturation Voltage Applications: Color TV Horizontal Deflection Output Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1500V CBO CollectorEmitter Voltage, V ..................................................... 800V CEO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I C Continuous .................................................................. 10A Pulse ....................................................................... 30A Continuous Base Current, I .......................................................... 5A B Collector Power Dissipation (T = +25C), P ......................................... 70W C C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 8A, I = 1.6A 5.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 8A, I = 1.6A 1.5 V BE(sat) C B Collector Cutoff Current I V = 1400V, V = 0 1.0 mA CES CE BE V = 800V, I = 0 10 A I CB E CBO V = 4V, I = 0 1.0 mA EB C DC Current Gain h I = 1A, V = 5V 15 40 FE C CE I = 8A, V = 5V 8 10 C CE Fall Time t I = 6A, I = 1.2A, I = 2.4A, 0.3 s f C B1 B2 V = 200V, R = 33.3 CC L Rev. 1210.217 (5.5) .610 (15.5) .130 (3.3) .177 (4.5) .378 (9.6) .965 (24.5) .177 (4.5) .720 (18.3) Min BC E .215 (5.47) .138 (3.5)