NTE308 Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward OffState and Reverse Voltage, V , V . . . . . . . . . . . . . . . . . . . 800V DRM RRM RMS OnState Current, I , I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A TRMSM FRMSM Mean OnState Current (T = +80C), I , I C TAVM FAVM Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4A Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.45A Repetitive Peak OnState Current, I , I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TRM FRM Surge Current (t = 10ms, t = +100C), I , I vi TSM FSM Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A NonRepetitive Rate of Rise of OnState Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/ s crit Repetitive Rate of Rise of OnState Current (I = 20A, t = +100C, V = 640V), di/dt TM vi DM crit (Pulse Generator Data: v = 8V, i = 0.25A, di /dt 0.25A/ s) L K G f = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/ s o f = 16kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/ s o Rate of Rise of OffState Voltage (t = +100C, V = 536V), dv/dt . . . . . . . . . . . . . . . . . . 400V/ s vi D crit Rate of Rise of Voltage Subsequent to Prior OnState Current, dv/dt crit t = +100C, V = 536V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/ s vi D Peak Gate Power Losses (t 10 s), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W g GM Total Mean Gate Power Loss for One Cycle, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W G Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +130C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3C/W thJC Thermal Resistance, JunctiontoAmbient, R thJA Without Heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface . . 10C/W Electrical Characteristics: Maximum OnState Voltage (t = +25C, i = i = 10A), V , V vi T F T F Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.16V Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2V Threshold Voltage, V (TO) Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V Forward Slope Resistance, r , r T F Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Electrical Characteristics (Contd): Maximum Gate Trigger Voltage (t = +25C, V = 6V, R = 20 ), V . . . . . . . . . . . . . . . . . . . 2.0V vi D A GT Minimum Gate Trigger Voltage (t = +100C, V = 6V, R = 20 ), V . . . . . . . . . . . . . . . . . . . 0.1V vi D A GT Maximum Gate Trigger Current (t = +25C, V = 6V, R = 20 ), I . . . . . . . . . . . . . . . . . . . 50mA vi D A GT Maximum Holding Current (t = +25C, V = 6V, R = 20 ), I . . . . . . . . . . . . . . . . . . . . . . . . 100mA vi D A H Maximum Latching Current (t = +25C, V = 6V, R 20 ), I . . . . . . . . . . . . . . . . . . . . . . 210mA vi D GK L (Pulse Generator Data: i = 0.25A, di /dt = 0.25A/ s, t = 4 s) G G g Typical Capacitance, AnodeCathode at Zero Voltage (t = +25C, f = 16kHz), C . . . . . 250pF vi o zero Maximum Lag Charge (t = +100C, i = 10A, di /dt = 10A/ s), Q . . . . . . . . . . . . . . . . . 0.96 As vi FM F S Maximum Forward OffState and Reverse Current (t = +100C, v = 800V), i , i . . . . . . . 1.5mA vi D D R Maximum Gate Controlled Delay Time (t = +25C, V = 536V, i = 5A), t . . . . . . . . . . . . 0.8 s vi D TM gd (Pulse Generator Data: i = 0.25A, di /dt = 0.5A/ s) G G Maximum Pulse TurnOff Time (t = +100C), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1 s vi qp Typical Pulse TurnOff Time (t = +80C, f = 16kHz), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 s vi o qp Maximum Reverse Recovery Time (t = +25C, i = 10A, di /dt = 10A/ s), t . . . . . . . . . . 0.7 s vi FM F rr .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .360 (9.14) Min .960 (24.3) Gate .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Anode/Case Cathode