Product Information

BUJ302A

BUJ302A electronic component of NXP

Datasheet
TRANSISTOR, NPN, 4A, 1050V, TO220
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9914 ea
Line Total: USD 1.99

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 1.2235
10 : USD 1.0319
100 : USD 0.7946
500 : USD 0.6286
1000 : USD 0.4821
2000 : USD 0.4382

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

BUJ302A NPN power transistor Rev. 02 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Low thermal resistance High voltage capability 1.3 Applications DC-to-DC converters Inverters High-frequency electronic lighting Motor control systems ballast applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 --4 A C see Figure 4 P total power dissipation T 25 C see Figure 3 --80 W tot mb V collector-emitter peak V=0V --1050V CESM BE voltage Static characteristics 1 DC current gain I = 0.1 A V =5V 48 66 100 h FE C CE T =25 C see Figure 11 mb 1 I = 0.8 A V =3V 25 42 50 C CE T =25 C see Figure 12 mb 1 Pulse test: pulse duration 300 s, duty cycle 2 % TO-220ABBUJ302A NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 2 C collector 3E emitter B mb C mounting base connected to E collector sym123 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302A TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 1050 V CESM BE V collector-emitter voltage I = 0 A - 400 V CEO B I collector current see Figure 1 see Figure 2 see Figure 4 -4 A C I peak collector current - 8 A CM I base current - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -80 W tot mb T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I =0A I =2A t < 10 ms - 24 V EBO C E p BUJ302A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 28 March 2011 2 of 13

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