X-On Electronics has gained recognition as a prominent supplier of BUJ302A across the USA, India, Europe, Australia, and various other global locations. BUJ302A are a product manufactured by NXP. We provide cost-effective solutions for BUJ302A, ensuring timely deliveries around the world.

BUJ302A NXP

BUJ302A electronic component of NXP
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Part No.BUJ302A
Manufacturer: NXP
Category: Unclassified
Description: TRANSISTOR, NPN, 4A, 1050V, TO220
Datasheet: BUJ302A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2623 ea
Line Total: USD 1.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2623
10 : USD 1.0647
100 : USD 0.8198
500 : USD 0.6486
1000 : USD 0.4974
2000 : USD 0.4521

   
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUJ302A from our NXP manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUJ302A and other electronic components in the NXP manufacturer and beyond.

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BUJ302A NPN power transistor Rev. 02 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Low thermal resistance High voltage capability 1.3 Applications DC-to-DC converters Inverters High-frequency electronic lighting Motor control systems ballast applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 --4 A C see Figure 4 P total power dissipation T 25 C see Figure 3 --80 W tot mb V collector-emitter peak V=0V --1050V CESM BE voltage Static characteristics 1 DC current gain I = 0.1 A V =5V 48 66 100 h FE C CE T =25 C see Figure 11 mb 1 I = 0.8 A V =3V 25 42 50 C CE T =25 C see Figure 12 mb 1 Pulse test: pulse duration 300 s, duty cycle 2 % TO-220ABBUJ302A NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 2 C collector 3E emitter B mb C mounting base connected to E collector sym123 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302A TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 1050 V CESM BE V collector-emitter voltage I = 0 A - 400 V CEO B I collector current see Figure 1 see Figure 2 see Figure 4 -4 A C I peak collector current - 8 A CM I base current - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -80 W tot mb T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I =0A I =2A t < 10 ms - 24 V EBO C E p BUJ302A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 28 March 2011 2 of 13

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