PBRP113ZT NXP

PBRP113ZT PNP 800 mA, 40 V BISS RET R1 = 1 k, R2 = 10 k Rev. 01 16 January 2008 Product data sheet 1. Product prole 1.1 General description 800 mA PNP low V Breakthrough In Small Signal (BISS) Resistor-Equipped CEsat Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT. 1.2 Features n 800 mA repetitive peak output current n Low collector-emitter saturation voltage V CEsat n High current gain h n Reduces component count FE n Built-in bias resistors n Reduces pick and place costs n Simplies circuit design n 10 % resistor ratio tolerance 1.3 Applications n Digital application in automotive and n Switching loads industrial segments n Medium current peripheral driver 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - - 40 V CEO 1 2 I output current -- - 600 mA O 3 I repetitive peak output current t 1 ms -- - 800 mA ORM p 0.33 R1 bias resistor 1 (input) 0.7 1 1.3 k R2/R1 bias resistor ratio 9 10 11 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 collector 1 cm . 2 Device mounted on a ceramic PCB, Al O , standard footprint. 2 3 3 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.PBRP113ZT NXP Semiconductors PNP 800 mA, 40 V BISS RET R1 = 1 k, R2 = 10 k 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 input (base) 3 3 2 GND (emitter) R1 1 3 output (collector) R2 12 2 sym003 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBRP113ZT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PBRP113ZT *7M 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - - 40 V CBO V collector-emitter voltage open base - - 40 V CEO V emitter-base voltage open collector - -5V EBO V input voltage I positive - +5 V negative - - 10 V 1 2 I output current - - 600 mA O 3 I repetitive peak output current t 1 ms - - 800 mA ORM p 0.33 PBRP113ZT 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 16 January 2008 2 of 12