Ordering number : ENN7148 2SJ589LS P-Channel Silicon MOSFET 2SJ589LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C 2SJ589LS 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 12 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25C SANYO : TO-220FI(LS) Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --15 A D Drain Current (Pulse) I PW10s, duty cycle1% --60 A DP 2.0 W Allowable Power Dissipation P D Tc=25C25W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0 --10 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.0 --2.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--8A 10 14 S DS D R (on)1 I =--8A, V =--10V 58 80 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--8A, V =--4V 80 115 m DS D GS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3294 No.7148-1/4 16.1 3.6 3.5 7.2 2.4 14.0 16.0 0.62SJ589LS Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =--20V, f=1MHz 1300 pF DS Output Capacitance Coss V =--20V, f=1MHz 300 pF DS Reverse Transfer Capacitance Crss V =--20V, f=1MHz 90 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 15 ns d Rise Time t See specified Test Circuit. 70 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 140 ns d Fall Time t See specified Test Circuit. 72 ns f Total Gate Charge Qg V =--10V, V =--10V, I =--15A 40 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--15A 5 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--10V, I =--15A 10 nC DS GS D Diode Forward Voltage V I =--15A, V =0 --0.91 --1.2 V SD S GS Switching Time Test Circuit V = --30V DD V IN 0V I = --8A D --10V R =3.75 L D V OUT V IN PW=10s D.C.1% G P.G 50 2SJ589LS S I -- V I -- V D GS D DS --30 --16 V = --10V DS --14 --25 --12 --20 --10 --8 --15 --6 --10 --4 --5 --2 V = --2.5V GS 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 Drain-to-Source Voltage, V -- V IT04147 Gate-to-Source Voltage, V -- V IT04148 DS GS R (on) -- V R (on) -- Tc DS GS DS 140 140 Tc=25C I = --8A D 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --60 --40 --2004200 6080 100 120 140 IT04149 IT04150 Gate-to-Source Voltage, V -- V Case Temperature, Tc -- C GS No.7148-2/4 -3.0V - --3.5V --4.0V I = --8A, V = --10V D GS I = --8A, V = --4V D GS --6.0V --5.0V 25C Tc=75C --8.0V --10.0V --25C 25C 75C Tc= --25C Static Drain-to-Source Drain Current, I -- A D On-State Resistance, R (on) -- m DS Static Drain-to-Source Drain Current, I -- A D On-State Resistance, R (on) -- m DS