BC372, BC373 High Voltage Darlington Transistors NPN Silicon BC372, BC373 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) CollectorEmitter Breakdown Voltage V Vdc (BR)CES (I = 100 Adc, I = 0) BC372 100 C B 80 BC373 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) BC372 100 C E BC373 80 EmitterBase Breakdown Voltage V 12 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 80 Vdc, I = 0) BC372 100 CB E (V = 60 Vdc, I = 0) BC373 100 CB E Emitter Cutoff Current I 100 nAdc EBO (V = 10 V, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h K FE (I = 250 mAdc, V = 5.0 Vdc) 8.0 C CE (I = 100 mAdc, V = 5.0 Vdc) 10 160 C CE CollectorEmitter Saturation Voltage V 1.0 1.1 Vdc CE(sat) (I = 250 mAdc, I = 0.25 mAdc) C B BaseEmitter Saturation Voltage V 1.4 2.0 Vdc BE(sat) (I = 250 mAdc, I = 0.25 mAdc) C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 100 200 MHz T (I = 100 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 25 pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Noise Figure NF 2.0 dB (I = 1.0 mAdc, V = 5.0 Vdc, R = 100 k , f = 1.0 kHz) C CE g 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.